Abstract
We developed a new prototype TCAD tool for wafer processing, particularly to predict BMD(bulk micro defects) distribution, metal gettering characteristics, stress/slip behaviors from the view points of industry such as device reliability and reproducibility. We present herein (i)system concepts and basic models of the tool, (ii)notable output results of BMD radius/profiles in terms of initial interstitial oxygen ([Oi]) concentration and process sequences in conjunction with metal gettering and typical stress/slip behaviors. We also discuss thermal budget customization with emphasis on substrate stiffness and gettering efficiency for reliability and reproducibility improvements in scaled devices.
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References
Fore instance, YK. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, TJ. King, J. Bokor and C. Hu, IEDM Technical Digest, pp. 19.1.1, 2001; A. Teramoto, T. Hamada, H, Akahori, et al., IEDM Technical Digest, pp. 33.4.1, 2003.
M. Schrems, T. Brabec, M. Budil, H. Potzl, E. Guerrero, D. Huber and P. Pongrats, “Simulation of oxygen precipitation in Czochralski grown silicon”, Mater. Sci. Eng. B, vol. B4, no. 1–4, pp.393, 1989.
H. Takeno, T. Otogawa and Y. Kitagawara, “Practical computer simulation technique to predict oxygen precipitation behavior in Czochralski silicon wafer for various thermal processes”, J Electrochem. Soc., vol. 144, no. 12, pp. 4340–5, 1997.
A. A. Istratov, C. Flink, H. Hieslmair, S. A. McHugo and E. R. Weber, “Diffusion, solubility and gettering of copper in silicon”, Mater. Sci. Eng. B, vol. B72, no. 2–3, pp. 99–104, 2000.
R. Holzl, L. Fabry and K. J. Range, “Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p-silicon epitatial wafers”, Appl. Phys. A, Mater. Sci Process., vol. A73, no. 2, pp. 137–42, 2001.
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© 2007 Springer-Verlag Wien
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Okada, T. et al. (2007). A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_32
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DOI: https://doi.org/10.1007/978-3-211-72861-1_32
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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