Abstract
Possible arrangements of As in bulk Si have been investigated using ab initio calculations to establish the most stable configurations depending on As concentration and charge state. Consistently with these results we developed a continuous model for As activation and diffusion in Si. The model was implemented in the Sentaurus Process Simulator and calibrated using a wide range of experimental results available in the literature. It was independently tested for spike and flash annealing experiments with excellent results.
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References
F. Iacona, V. Raineri, and F. La Via, Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon, Phys. Rev. B 58, 10990 (1998).
J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, and M. J. Caldas, Mechanism of dopant segregation to SiO2/Si (100) interfaces, Phys. Rev. B 65. 245305 (2002).
S. Solmi and M. Ferri, Transient enhanced diffusion of arsenic in silicon, J. Appl. Phys. 94, 4950 (2003).
W. Lerch, S. Paul, J. Chan, S. McCoy, J. Gelpey, F. Cristiano, F. Severac, P. F. Fazzini, D. Bolze, P. Pichler, A. Martinez, A. Mineji, and S. Shishiguchi, Experimental and theoretical results of dopant activation by a combination of spike and flash annealing, International Workshop on Junction Technology, IWJT’ 07 (2007).
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© 2007 Springer-Verlag Wien
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Martinez-Limia, A. et al. (2007). Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_3
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DOI: https://doi.org/10.1007/978-3-211-72861-1_3
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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