Abstract
Numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along <110> in terms of the device performance of strained 65nm-node nMOSFETs with Contact Etch Stop Layer (CESL), and that both the shear strain component and the quantum confinement effect play an important role in this superiority.
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Takashino, H. et al. (2007). Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_25
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DOI: https://doi.org/10.1007/978-3-211-72861-1_25
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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