Abstract
In industrial environments, numerical simulation has become an indispensable tool for the development and optimization of especially front-end processes. In order to remain useful for future technology nodes, process simulation has to follow and partly even anticipate paradigm shifts of state-of-the-art processes and new materials for future nanoelectronic devices. Within this article, the author presents his personal view of unsolved and upcoming issues that have to be addressed and solved in future.
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References
G. E. Moore, “Cramming more components onto integrated circuits,” Electronics, vol. 38, no. 8, pp. 114–117, 1965.
T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. Mclntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, and M. Bohr, “A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors,” in Technical Digest of the 2003 International Electron Devices Meeting (IEDM), (Piscataway), pp. 978–980, IEEE, 2003.
M. E. Law, K. S. Jones, L. Radic, R. Crosby, M. Clark, K. Gable, and C. Ross, “Process modeling for advanced devices,” in Silicon Front-End Junction Formation-Physics and Technology (P. Pichler, A. Claverie, R. Lindsay, M. Orlowski, and W. Windl, eds.), vol. 810 of Mat. Res. Soc. Symp. Proc, pp. C3.1.1–C3.1.7, 2004.
Y. Todokoro and I. Teramoto, “The stress-enhanced diffusion of boron in silicon,” J. Appl. Phys., vol. 49, no. 6, pp. 3527–3529, 1978.
K. Osada, Y. Zaitsu, S. Matsumoto, M. Yoshida, E. Arai, and T. Abe, “Effect of stress in the deposited silicon nitride films on boron diffusion of silicon,” J. Electrochem. Soc, vol. 142, no. 1, pp. 202–206, 1995.
S. Mizuo, T. Kusaka, A. Shintani, M. Nanba, and H. Higuchi, “Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si,” J. Appl. Phys., vol. 54, no. 7, pp. 3860–3866, 1983.
N. R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, and A. Nylandsted Larsen, “Boron diffusion in strained and relaxed Si1-x Gex,” in Diffusion in Materials DIMAT-2000 (Y. Limoge and J. L. Bocquet, eds.), vol. 194–199 of Defect and Diffusion Forum, pp. 703–708, 2001.
N. S. Bennett, A. J. Smith, C. S. Beer, L. O’Reilly, B. Colombeau, G. D. Dilliway, R. Harper, P. J. McNally, R. Gwilliam, N. E. B. Cowern, and B. J. Sealy, “Enhanced antimony activation for ultra-shallow junctions in strained silicon,” in Doping Engineering for Device Fabrication (B. J. Pawlak, S. B. Felch, K. S. Jones, and M. Hane, eds.), vol. 912 of Mat. Res. Soc. Symp. Proc, pp. 0912-C02–03, 2006.
F. C. Larché and J. W. Cahn, “The effect of self-stress on diffusion in solids,” Acta Metallurgica, vol. 30, pp. 1835–1845, 1982.
B. J. Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, and F. Cristiano, “Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions,” Appl. Phys. Lett., vol. 84, no. 12, pp. 2055–2057, 2004.
R. Pinacho, M. Jaraíz, H. J. Gossmann, G. H. Gilmer, J. L. Benton, and P. Werner, “The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations,” in Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions II (A. Agarwal, L. Pelaz, H.-H. Vuong, P. Packan, and M. Kase, eds.), vol. 610 of Mat. Res. Soc Symp. Proc, pp. B7.2.1–B7.2.6, 2000.
M. Diebel, S. Chakravarthi, S. T. Dunham, C. F. Machala, S. Ekbote, and A. Jain, “Investigation and modeling of fluorine Co-implantation effects on dopant redistribution,” in CMOS Front-End Materials and Process Technology (T.-J. King, B. Yu, R. J. P. Lander, and S. Saito, eds.), vol. 765 of Mat. Res. Soc. Symp. Proc, pp. D6.15.1–D6.15.6, 2003.
G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, and A. Carnera, “Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion,” J. Appl. Phys., vol. 99, p. 103510, 2006.
W. Lerch, S. Paul, J. Niess, S. McCoy, T. Selinger, J. Gelpey, F. Cristiano, F. Severac, M. Gavelle, S. Boninelli, P. Pichler, and D. Bolze, “Advanced activation of ultra-shallow junctions using flash-assisted RTP,” in Materials Science and Device Issues for Future Technologies (L. Pelaz and R. Duffy, eds.), vol. 124–125 of Materials Science and Engineering B, pp. 24–31, 2005.
P. Pichler, A. Burenkov, W. Lerch, J. Lorenz, S. Paul, J. Niess, Z. Nényei, J. Gelpey, S. McCoy, W. Windl, and L. F. Giles, “Process-induced diffusion phenomena in advanced CMOS technologies,” in Diffusion in Solids and Liquids (A. Öchsner and J. Grácio, eds.), vol. 258–260 of Defect and Diffusion Forum, pp. 510–521, 2006.
V. C. Venezia, T. E. Haynes, A. Agarwal, L. Pelaz, H.-J. Gossmann, D. C. Jacobson, and D. J. Eaglesham, “Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon,” Appl. Phys. Lett., vol. 74, no. 9, pp. 1299–1301, 1999.
A. J. Smith, N. E. B. Cowern, B. Colombeau, R. Gwiiliam, B. J. Sealy, E. J. H. Collart, S. Gennaro, D. Giubertoni, M. Bersani, and M. Barozzi, “Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants,” in 16 th International Conference on Ion Implantation Technology — IIT 2006 (K. J. Kirkby, R. M. Gwilliam, A. Smith, and D. Chivers, eds.), vol. 866 of AIP Conference Proceedings, pp. 84–87, 2006.
D. W. Donnelly, B. C. Covington, J. Grun, R. P. Fischer, M. Peckerar, and C. L. Felix, “Athermal annealing of low-energy boron implants in silicon,” Appl. Phys. Lett., vol. 78, no. 14, pp. 2000–2002, 2001.
B. Lojek, “Athermal annealing of silicon implanted layer: Beyond the light,” in 12 th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2004 (J. Gelpey, B. Lojek, Z. Nenyei, and R. Singh, eds.), (Piscataway), pp. 53–60, IEEE, 2004.
F. A. Trumbore, “Solid solubilities of impurity elements in germanium and silicon,” Bell Syst. Techn. J., vol. 39, no. 1, pp. 205–233, 1960.
D. Beke, ed., Diffusion in Semiconductors, vol. III/33A of Landolt-Börnstein. Berlin: Springer-Verlag, 1998.
S. Uppal, A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern, T. Grasby, R. J. H. Morris, and M. G. Dowsett, “Diffusion of boron in germanium at 800–900°C,” J. Appl. Phys., vol. 96, no. 3, pp. 1376–1380, 2004.
C. Claeys, T. Peaker, B. Svensson, and J. Vanhellemont, eds., Germanium Based Semiconductors from Materials to Devices, vol. 9 of Materials Science in Semiconductor Processing, 2006.
P. Pichler, Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Wien: Springer-Verlag, 2004.
A. Claverie, B. Colobeau, B. De Mauduit, C. Bonafos, X. Hebras, G. Ben Assayag, and F. Cristiano, “Extended defects in shallow implants,” Appl. Phys. A, vol. 76, pp. 1025–1033, 2003.
W. C. Dunlap, Jr., “Diffusion of impurities in germanium,” Phys. Rev., vol. 94, no. 6, pp. 1531–1540, 1954.
W. Meer and D. Pommerrenig, “Diffusion von aluminium und bor in germanium,” Z. angew. Phys., vol. 23, no. 6, pp. 369–372, 1967.
E. Vainonen-Ahlgren, T. Ahlgren, J. Likonen, S. Lehto, J. Keinonen, W. Li, and J. Haapamaa, “Identification of vacancy charge states in diffusion of arsenic in germanium,” Appl. Phys. Lett., vol. 77, no. 5, pp. 690–692, 2000.
H. Bracht and S. Brotzmann, “Atomic transport in germanium and the mechanism of arsenic diffusion,” in Germanium Based Semiconductors from Materials to Devices (C. Claeys, T. Peaker, B. Svensson, and J. Vanhellemont, eds.), vol. 9 of Materials Science in Semiconductor Processing, pp. 471–476, 2006.
S. Mitha, M. J. Aziz, D. Schiferl, and D. B. Poker, “Effect of pressure on arsenic diffusion in germanium: Evidence against simple vacancy mechanism,” in Diffusion in Materials (H. Mehrer, C. Herzig, N. A. Stolwijk, and H. Bracht, eds.), vol. 143–147 of Defect and Diffusion Forum, pp. 1041–1046, 1997.
D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman, and E. E. Haller, “Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge,” Appl. Phys. Lett., vol. 90, p. 132114, 2007.
A. Satta, G. Nicholas, E. Simoen, M. Houssa, A. Dimoulas, B. De Jaeger, J. Van Steenbergen, and M. Meuris, “Impact of germanium surface passivation on the leakage current of shallow planar p-n junctions,” in T. Peaker, B. Svensson, and J. Vanhellemont, eds., Germanium Based Semiconductors from Materials to Devices, vol. 9 of Materials Science in Semiconductor Processing Claeys et al. [29], pp. 716–720.
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Pichler, P. (2007). Upcoming Challenges for Process Modeling. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_20
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DOI: https://doi.org/10.1007/978-3-211-72861-1_20
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