Abstract
We have developed an atomistic model for dopant diffusion in SiGe structures and we have implemented it in the kinetic Monte Carlo process simulator DADOS. The model takes into account (i) composition and stress effects on the diffusivity of interstitials, vacancies and dopants, (ii) SiGe interdiffusion, (iii) dopant segregation and (iv) the modifications of band-gap and charge levels. The model has been tested for B and Sb providing a very good agreement with available experimental data.
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References
M. Aziz, Y. Zhao, H. J. Gossmann, S. Mitha, S. P. Smith and D. Schiferl. “Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys”. Physical Review B, vol. 73, pp. 054101/1-20, 2006.
P. Kringhøj, A. Nylandsted-Larsen and S. Y. Shirayev, “Diffusion of Sb in strained and relaxed Si and SiGe”, Physical Review Letters, vol. 76, pp. 3372–3375, 1996.
C. H. Chen, U. M. Gösele and T. Y. Tan, “Dopant diffusion and segregation in semiconductor heterostructures. Pt. 2. B in GexSi1−x/Si structures”, Applied Physics A, vol. 68, pp. 19–24, 1999.
M Jaraiz, P. Castrillo, R. Pinacho, I. Martin-Bragado and J. Barbolla, “Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication”, Simulation of Semiconductor Processes and Devices 2001, Springer-Verlag, ISBN 3-211-83708-6 10–17, 2001.
N. R. Zangenberg, J. Lundsgaard-Hansen, J. Fage-Pedersen and A. Nylandsted-Larsen, “Ge self-diffusion in epitaxial Si1−xGex layers”, Physical Review Letters, vol. 87, pp. 125901/1-4, 2001.
A. Strohm, “Self-diffusion of 71Ge in Si-Ge”, Ph.D. Thesis, University of Stuttgart, 2002.
M. Werner, H. Mehrer and H. D. Hochheimer, “Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium”, Physical Review B, vol. 32, pp. 3930–3937, 1985.
P. Laitinen, “Self-and impurity diffusion in intrinsic relaxed silicon-germanium”. Ph.D Thesis, University of Jyväskylä, 2004.
P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner and D. Lefforge. “Effects of strain on boron diffusion in Si and Si1−xGex”, Applied Physics Letters, vol. 66, pp. 580–582, 1995.
S. Uppal, A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern, T. Grasby, R. J. H. Morris and M. G. Dowsett, “Diffusion of boron in germanium at 800–900°”, Journal of Applied Physics, vol. 96, pp. 1376–1380, 2004.
R. F. Lever, J. M. Bonar and A. F. Willoughby, “Boron diffusion across silicon-silicon germanium boundaries”, Journal of Applied Physics, vol. 83, pp. 1988–1994, 1998.
Experimental data of Ref.9 have been corrected by a factor 0.3 in Fig.2.b in order to get commonly accepted values for B diffusivity in unstrained Si (about 4·10−17cm2/s).
P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz and T. I. Kamins, “Comparison of boron diffusion in Si and strained Si1−xGex epitaxial layers”. Applied Physics Letters, vol. 62, pp. 6126–14, 1993.
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Castrillo, P., Pinacho, R., Rubio, J.E., Vega, L.M., Jaraiz, M. (2007). Atomistic Modeling of Defect Diffusion in SiGe. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_2
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DOI: https://doi.org/10.1007/978-3-211-72861-1_2
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