Abstract
An evolutionary model of semiconductor devices accounting for saturated convective velocities and source terms is considered. The model includes a generation/recombination term of Shockley-Read-Hall and Auger as well as current dependent terms related to impact ionization.
For the one dimensional model with the standard avalanche term existence and uniqueness of the global-in-time solutions are shown. In the case of several dimensions the solvability of rather general reaction-diffusion-convection system coupled with the Poisson equation is shown.
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© 1994 Springer Basel AG
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Wrzosek, D. (1994). The Non-Stationary Semiconductor Model with Bounded Convective Velocity and Generation/Recombination Term.. In: Bank, R.E., Gajewski, H., Bulirsch, R., Merten, K. (eds) Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices. ISNM International Series of Numerical Mathematics, vol 117. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-8528-7_22
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DOI: https://doi.org/10.1007/978-3-0348-8528-7_22
Publisher Name: Birkhäuser, Basel
Print ISBN: 978-3-0348-9665-8
Online ISBN: 978-3-0348-8528-7
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