Abstract
For the type of boundary value problems which figure in the drift-diffusion semiconductor model, the perpendicular-bisecting box-method discretization yields M-matrices and maximum stability on Delaunay triangulations, whereas the piecewise linear finite element discretization need not. In two dimensions this discrepancy is due to variability of coefficients in the drift-diffusion equations. In three dimensions the difference is, furthermore, of geometric origin. Some results for both dimensionalities are presented and discussed.
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© 1994 Springer Basel AG
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Kerkhoven, T. (1994). A Piecewise Linear Petrov-Galerkin Analysis of the Box-Method. In: Bank, R.E., Gajewski, H., Bulirsch, R., Merten, K. (eds) Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices. ISNM International Series of Numerical Mathematics, vol 117. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-8528-7_17
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DOI: https://doi.org/10.1007/978-3-0348-8528-7_17
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