Skip to main content

Part of the book series: ISNM International Series of Numerical Mathematics ((ISNM,volume 117))

Abstract

For the type of boundary value problems which figure in the drift-diffusion semiconductor model, the perpendicular-bisecting box-method discretization yields M-matrices and maximum stability on Delaunay triangulations, whereas the piecewise linear finite element discretization need not. In two dimensions this discrepancy is due to variability of coefficients in the drift-diffusion equations. In three dimensions the difference is, furthermore, of geometric origin. Some results for both dimensionalities are presented and discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. I. Babuška and A.K. Aziz. The Mathematical Foundations of the Finite Element Method with Applications to Partial Differentiqal Equations. Academic Press, New York, San Fransisco, London, 1972.

    Google Scholar 

  2. Randolph E. Bank and Donald J. Rose. Some Error Estimates for the Box Method. SIAM J. on Numer. Anal., 24:777–787, 1987.

    Article  MATH  Google Scholar 

  3. Randolph E. Bank, Donald J. Rose, and Wolfgang Fichtner. Numerical Methods for Semiconductor Device Simulation. SIAM J. on Scient. and Statist. Comp., 4(3):416–435, September 1983.

    Article  MATH  Google Scholar 

  4. Philippe G. Ciarlet. The Finite Element Method for Elliptic Problems. North Holland, Amsterdam, New York, Oxford, 1978.

    MATH  Google Scholar 

  5. B. Delaunay. Sur La Sphere Vide. Izvestia Akademii Nauk SSSR, Otdelenie Matematicheskii i Estestvennyka Nauk, 7(6):792–800, 1932.

    Google Scholar 

  6. Herbert Edelsbrunner. Spatial Triangulations with Dihedral Angle Conditions. In Proc. Int. Workshop on Discrete Algorithms and Complexity pages 83–89, 1989.

    Google Scholar 

  7. Jörg Machel and Siegfried Selberherr. A Novel Finite Element Approach to device Modeling. IEEE TRans on Electr. Dev., ED-30(9):1083–1092, 1983.

    Google Scholar 

  8. Thomas Kerkhoven. Petrov-Galerkin Finite Element Approximation And The Box-Method. Technical report, University of Illinois, in preparation.

    Google Scholar 

  9. Thomas Kerkhoven and Joseph W. Jerome L Stability of Finite Element Approximations to Elliptic Gradient Equations. Numerische Mathematik, 57:561–575, 1990.

    Article  MathSciNet  MATH  Google Scholar 

  10. D. Scharfetter and H.K. Gummel. Large signal analysis of a silicon read diode oscillator. IEEE Trans. Electron Devices, ED-20:64–77, 1969.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1994 Springer Basel AG

About this paper

Cite this paper

Kerkhoven, T. (1994). A Piecewise Linear Petrov-Galerkin Analysis of the Box-Method. In: Bank, R.E., Gajewski, H., Bulirsch, R., Merten, K. (eds) Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices. ISNM International Series of Numerical Mathematics, vol 117. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-8528-7_17

Download citation

  • DOI: https://doi.org/10.1007/978-3-0348-8528-7_17

  • Publisher Name: Birkhäuser, Basel

  • Print ISBN: 978-3-0348-9665-8

  • Online ISBN: 978-3-0348-8528-7

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics