Abstract
Energy-transport models describe the flow of electrons in a semiconductor crystal. Several formulations of these models, in the primal or dual entropy variables or in the drift-diffusion-type variables, are reviewed. A numerical discretization of the steady-state drift-diffusion-type formulation using mixed-hybrid finite elements introduced by Marini and Pietra is presented. The scheme is first applied to the simulation of a one-dimensional ballistic diode with non-parabolic band diagrams. Then a two-dimensional deep submicron MOSFET device with parabolic bands is simulated, using an adaptively refined mesh.
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Holst, S., Jüngel, A., Pietra, P. (2003). Finite-element Discretizations of Semiconductor Energy-transport Equations. In: Antreich, K., Bulirsch, R., Gilg, A., Rentrop, P. (eds) Modeling, Simulation, and Optimization of Integrated Circuits. ISNM International Series of Numerical Mathematics, vol 146. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-8065-7_4
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DOI: https://doi.org/10.1007/978-3-0348-8065-7_4
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