Abstract
In the partial differential equations used so far in our treatment, the temperature at each point in the gas was calculated as a solution of the heat transport equation (2.4). The only inputs necessary are the heat conductivity A, the heat capacity c p of the gas, and the temperature values on the solid boundaries of the reactor. In section 2.7 we have seen that reliable values for the transport parameters λ and c p can be obtained using gas kinetic theory and table data for pure gas components.
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References Chapter 3
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© 1993 Springer Basel AG
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Kleijn, C.R., Werner, C. (1993). Thermal modeling. In: Modeling of Chemical Vapor Deposition of Tungsten Films. Progress in Numerical Simulation for Microelectronics. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-7741-1_4
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DOI: https://doi.org/10.1007/978-3-0348-7741-1_4
Publisher Name: Birkhäuser, Basel
Print ISBN: 978-3-0348-7743-5
Online ISBN: 978-3-0348-7741-1
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