Abstract
In this paper we discuss a mixed finite element approximation based on tetrahedral elements for the semiconductor continuity equations. The method can be regarded as an extension to three dimensions of the one-dimensional Scharfetter-Gummel scheme. The associated linear system is of the same form as that of the conventional box scheme. The existence, uniqueness and convergence of the solution obtained by this method are presented. We discuss the evaluation of the terminal currents and prove that the conputed terminal currents are convergent and conservative.
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Miller, J.J.H., Wang, S. (1990). A Mixed Finite Element Method with Tetrahedral Elements for the Semiconductor Continuity Equations. In: Bank, R.E., Merten, K., Bulirsch, R. (eds) Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices. International Series of Numerical Mathematics / Internationale Schriftenreihe zur Numerischen Mathematik / Série internationale d’Analyse numérique, vol 93. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-5698-0_19
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DOI: https://doi.org/10.1007/978-3-0348-5698-0_19
Publisher Name: Birkhäuser, Basel
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