Abstract
In this paper, a compact and low-cost, high-efficiency microwave power amplifier is proposed and designed. The proposed amplifier operates at the 5.8 GHz band for wireless communications systems. The amplifier is designed on a low-cost 5 W GaN HEMT transistor from Qorvo and a RO4350B substrate from Rogers. The high-efficiency can be obtained by treating the second harmonic at the input side. The output side is treated up to the third harmonic. Both small-signal and large-signal performance of the proposed amplifier were evaluated by both simulation and experiment. The simulated and measured results validate that the designed power amplifier can be realized in a compact size and delivered 5 W power with a high-efficiency at 5.8 GHz band.
This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under grant number 102.04-2018.14.
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© 2021 ICST Institute for Computer Sciences, Social Informatics and Telecommunications Engineering
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Manh, L.D., Hung, N.T., Anh, N.T., Loi, D.X., Hoang, N.H. (2021). Design of a Compact and High-Efficiency 5.8 GHz Microwave Power Amplifier for Wireless Communication Systems. In: Vo, NS., Hoang, VP., Vien, QT. (eds) Industrial Networks and Intelligent Systems. INISCOM 2021. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 379. Springer, Cham. https://doi.org/10.1007/978-3-030-77424-0_2
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DOI: https://doi.org/10.1007/978-3-030-77424-0_2
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