Abstract
The physics of transport in semiconductors is treated foremost for charge transport. Band transport and scattering, mobility, low field and high field effects as well as polarons and hopping transport are covered. A short section mentions ionic transport before heat conduction and coupled heat and charge transport including thermopower and Peltier effect are discussed.
Um über den Temperaturverlauf des Widerstandes Rechenschaft geben zu können, müssen andere Abweichungen von der strengen Periodizität entscheidend sein, nämlich diejenigen, welche von den thermischen Eigenschwingungen des Kristalls herrühren.
In order to be able to account for the temperature dependence of the resistivity, other deviations from the strict periodicity must be decisive, namely those which result from the thermal vibrations of the crystal.
F. Bloch, 1928 [61]
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Notes
- 1.
Going beyond the relaxation time approximation is discussed in Appendix J.
- 2.
The following arguments may only be followed once the concept of depletion layers and band bending is understood, see Sect. 21.2.1.
- 3.
Assuming \(m_{\mathrm {so}}=m_{\mathrm {e}}\), \(m_{\mathrm {e}}\ll m_{\mathrm {hh}}\) and \(\Delta _0\ll E_{\mathrm {g}}\), \(E_{\mathrm {so}}^{\mathrm {thr}}/E_{\mathrm {e}}^{\mathrm {thr}}\approx 1-(m_{\mathrm {e}}/m_{\mathrm {hh}})(1+\Delta /E_{\mathrm {g}})/2<1\).
- 4.
For the calculation, many-particle theory and techniques are needed; the best solution is still given by Feynman’s path integral calculation [786–788].
- 5.
This constant is part of the matrix element in the Hamiltonian of the electron–phonon interaction and is related to the electric field created by LO phonons, as given in (9.29).
- 6.
One can think about it in the way that the electron strongly polarizes the lattice and digs itself a potential hole out of which it can no longer move.
- 7.
This paragraph has been taken from the concise tutorial by S.J.F. Byrnes [794].
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Grundmann, M. (2021). Transport. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-51569-0_8
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DOI: https://doi.org/10.1007/978-3-030-51569-0_8
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