Electronic Defect States

Grundmann, Marius

doi:10.1007/978-3-030-51569-0_7

Marius Grundmann¹¹

Part of the book series: Graduate Texts in Physics ((GTP))

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Abstract

After the carrier statistics for intrinsic conduction and general doping principles, donors and acceptors, compensation and high doping effects are treated in detail. The concept of quasi-Fermi levels is introduced. Finally for deep levels and their thermodynamics general remarks and several examples are given.

Über Halbleiter sollte man nicht arbeiten, das ist eine Schweinerei, wer weiß ob es überhaupt Halbleiter gibt.

One should not work on semiconductors. They are a mess. Who knows whether semiconductors even exist.

W. Pauli, 1931[554]

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Notes

1.
Equation (7.5) is restricted to \(n>-1\). A form without restriction is \(\mathcal {F}_n(x)=\frac{1}{\Gamma (n+1)}\int \nolimits _0^{\infty }\frac{y^n}{1+\exp (y-x)}\mathrm {d}y\). The factor \(2/\sqrt{\pi }\) is often omitted but must be then added explicitly in, e.g., (7.6).
2.
We do not agree with the treatment of the conduction band valley degeneracy in [585] for the donor degeneracy factor for Ge and Si.
3.
As usual, the Fermi level is determined by the global charge neutrality, see also Sect. 4.2.2.
4.
It is given in the third edition of this book.
5.
W. Shockley had asked E. Fermi for permission to use his name reversed. Fermi was not too enthusiastic but granted permission.
6.
The chemical potential in a one-component system is \(\mu =\partial G/ \partial n=G/n\). In a multicomponent system it is, for the ith component, \(\mu _i=\partial G/ \partial n_i \ne G/n_i\).
7.
The electron configuration is 3d\(^8\) with two paramagnetic electrons. Under uniaxial stress along [100] the EPR line splits into a doublet [647]. Further details can be found in [648].
8.
The notation is \(^{2S+1}J\) (multiplicity), with S being the total spin and J being the total angular momentum.

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Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
Marius Grundmann

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Marius Grundmann
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Grundmann, M. (2021). Electronic Defect States. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-51569-0_7

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DOI: https://doi.org/10.1007/978-3-030-51569-0_7
Published: 07 March 2021
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-51568-3
Online ISBN: 978-3-030-51569-0
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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