Abstract
The results of researching the modern methods and devices of deterministic chaos signal generation, which are constructed on the Colpitts scheme, for the infocommunication systems are given. The main variants for circuitry solutions of the Colpitts chaotic oscillators and their mathematical models are investigated. It is proposed to use voltage-controlled transistor capacitance equivalents on the basis of bipolar transistor structures with negative impedance as capacitive elements of oscillating systems of the Colpitts scheme-based deterministic chaos oscillators. The elements of the theory of the Colpitts scheme-based deterministic chaos oscillators with single-transistor and multi-transistor active elements are presented. The chaotic dynamics of generated electric oscillations and their statistical and informational properties are investigated. Parameters of oscillating systems of the single-transistor and two-transistor Colpitts oscillators for the Kolmogorov-Sinai maximum were optimized. It is established that the maximum Kolmogorov-Sinai entropy is H = 0.1292 for the single-transistor Colpitts oscillator and H = 0.1642 for the two-transistor one with the fractal Hausdorff dimension of dF = 2.1123 and dF = 2.6293 respectively.
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Semenov, A. et al. (2021). Research of Dynamic Processes in the Deterministic Chaos Oscillator Based on the Colpitts Scheme and Optimization of Its Self-oscillatory System Parameters. In: Radivilova, T., Ageyev, D., Kryvinska, N. (eds) Data-Centric Business and Applications. Lecture Notes on Data Engineering and Communications Technologies, vol 48. Springer, Cham. https://doi.org/10.1007/978-3-030-43070-2_10
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