Abstract
This chapter presents mm-wave distributed oscillators (DOs) design running at 134 and 200 GHz, in 28 nm FD-SOI technology. First, the DO theory for operation close to transistor’s f T is detailed and then the design of their amplification stage and transmission lines (TLs) in a dedicated section each. The first section gives an insight of body-bias tuning capability through V T modulation governing the DOs’ output voltage, the two latter sections including layout consideration to minimize parasitics. The measurement setup and measurement results are then presented and a comparison with state of the art ends the chapter. The measured results show a remarkable DC-to-RF efficiency at 5.8% and phase noise of −99 dBc/Hz at 1 MHz offset and body-bias trimming effect on output power, DC-to-RF efficiency, and phase noise is detailed. Variability on wafer was measured for both oscillators, as an example, the 134 GHz oscillator features 0.015% frequency and 0.4 dBm output power standard deviations on 24 locations. Phase noise optimization against DC-to-RF efficiency trade-off using body-bias trimming is presented with 5 dBc/Hz phase noise gain at the limited cost of 1.8% efficiency reduction. This trimming can be adjusted by software configuration according to application needs.
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Guillaume, R., Cathelin, A., Deval, Y. (2020). Millimeter-Wave Distributed Oscillators in 28 nm FD-SOI Technology. In: Clerc, S., Di Gilio, T., Cathelin, A. (eds) The Fourth Terminal. Integrated Circuits and Systems. Springer, Cham. https://doi.org/10.1007/978-3-030-39496-7_7
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