Abstract
This paper deals with the analysis and simulation of a current sensing technique based on the estimation of the current flowing in the low-side MOSFETs of an inverter. In this case the power MOSFET is utilized as a current sensor, by estimating its internal on-state resistance. Due to the temperature dependency of the internal on-state resistance, the temperature of MOSFET die has been also estimated by measuring the internal body diode forward voltage of the power MOSFET. The proposed low-side MOSFET current sensing method will be used as current sensing in three-phase inverters for automotive applications.
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Acknowledgements
The authors of this paper would like to thank for the support to the project VEGA 1/0774/18 and by project ITMS: 26210120021, co-funded from EU sources and European Regional Development Fund. Authors would also like to thank the NXP Semiconductors in Czech Republic for their support.
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Varecha, P., Scelba, G., Cacciato, M., Makys, P., Pacha, M. (2020). Low-Side MOSFET Current Sensing Technique for Automotive Applications. In: Zamboni, W., Petrone, G. (eds) ELECTRIMACS 2019. Lecture Notes in Electrical Engineering, vol 615. Springer, Cham. https://doi.org/10.1007/978-3-030-37161-6_10
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DOI: https://doi.org/10.1007/978-3-030-37161-6_10
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