Abstract
This chapter describes the floating zone growth method of β-Ga2O3, the edge-defined film-fed growth of β-Ga2O3, and the manufacturing of β-Ga2O3 wafers . The floating zone method section briefly mentions the method’s history and typical growth conditions. The section on edge-defined film-fed growth method discusses the history, growth sequence, and conditions. It also covers the material properties of edge-defined film-fed grown β-Ga2O3 such as twin boundaries , dislocations , nanovoids , residual impurities , intentional doping , and dopant distribution . The wafer manufacturing section describes the basic wafer process and the effect of annealing on carrier concentration .
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Kuramata, A., Koshi, K., Watanabe, S., Yamaoka, Y. (2020). Floating Zone Method, Edge-Defined Film-Fed Growth Method, and Wafer Manufacturing. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_4
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DOI: https://doi.org/10.1007/978-3-030-37153-1_4
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