Abstract
The advent of next-generation broadcasting systems such as 8K Super Hi-Vision has increased the demand for high-performance cameras. However, the low sensitivity of 8K cameras is challenging. To address this issue, we have developed the stacked complementary metal-oxide semiconductor (CMOS) image sensor overlaid with a gallium oxide (Ga2O3 )/crystalline selenium (c-Se) photodiode. Using Ga2O3 decreased the dark current resulting from the injection of holes from the electrode. In addition, Ga2O3 doped with tin (Sn), which has higher carrier concentration , effectively reduced the operating voltage because the depletion layer spread into c-Se more easily as compared to that in non-doped Ga2O3. Furthermore, the crystallization of Ga2O3 improved the crystal orientation of the Se formed on β-Ga2O3 , thereby decreasing the dark current.
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Mineo, K. (2020). Image Sensors. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_39
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DOI: https://doi.org/10.1007/978-3-030-37153-1_39
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