Abstract
ε-Ga2O3 is one of the five polymorphs of Ga2O3, which has attracted considerable attention because it exhibits unique polarization and ferroelectric properties. In this chapter, we describe the growth of ε-Ga2O3 thin films via mist chemical vapor deposition (CVD). In the epitaxial growth of ε-Ga2O3 thin films, we demonstrated that various substrates allow ε-Ga2O3 growth via mist CVD because of the atomic arrangement between the surface of the substrate and the ε-Ga2O3 growth surface. Further, a method for distinguishing the hexagonal and orthorhombic structures of ε-Ga2O3 using X-ray diffraction (XRD) φ-scans was explained in detail. In our experiments, all ε-Ga2O3 thin films grown via mist CVD exhibited orthorhombic crystal structure, which permits rotational domains. Furthermore, the growth mechanism of these rotational domains was explained using the atomic arrangement of ε-Ga2O3 and the crystal structures of the substrates. Finally, bandgap engineering from 4.5 to 5.9 eV was demonstrated via mist CVD with the incorporation of In and Al.
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Nishinaka, H. (2020). Mist Chemical Vapor Deposition 2. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_13
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DOI: https://doi.org/10.1007/978-3-030-37153-1_13
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