Abstract
For the first time, Hg3In2Te6 (MIT) based Schottky diode photodetectors with the lowest reverse dark currents at high bias voltages were created. Both the Schottky rectifying and near Ohmic contacts were obtained by thermal vacuum deposition of Cr onto the MIT crystal surfaces pre-treated with Ar-ion bombardment at different regimes. The crystal surface morphology was monitored by AFM. Cr/MIT/Cr photodiodes were sensitive in the range of 0.6–1.8 μm and operated at increased bias voltage up to 300 V with low current density <150 and <20 μA/cm2 at 1 V at room temperature. I–V characteristics of the Cr/MIT/Cr diodes were investigated and showed high rectification ratio up to 103 at 1 V. A noticeable increase of the monochromatic current photosensitivity of Cr/MIT/Cr photodetectors was observed with increasing bias voltage and this parameter was weakly temperature dependent at voltages >10 V.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Rogalski, A.: History of infrared detectors. Opto-Electron. Rev. 20, 279–308 (2012)
Gnatyuk, V.A., Gorodnychenko, O.S., Mozol’, P.O., Ponedilok, A.V., Vlasenko, O.I.: Photoelectric properties of polycrystalline CdxHg1-xTe films grown on alternative substrates. Semicond. Sci. Techn. 13(11), 1304–1308 (1998)
Gnatyuk, V.A., Mozol’, P.O., Prokopenko, I.V., Smirnov, O.B., Vlasenko, O.I.: Laser-induced changes in the photoelectric properties of MnxHg1-xTe crystals. Inf. Phys. Tech. 42(2), 69–75 (2001)
Malik, A., Vieira, M., Femandes, M., Macarico, F., Grushka, Z.M.: Near-infrared photodetectors based on HgInTe-semiconductor compound. Proc. SPIE 3629, 433–442 (1999)
Grushka, Z.M., Gorley, P.N., Grushka, O.G., Horley, P.P., Radevych, Y.I., Zhuo Z.: Mercury indium telluride—a new promising material for photonic structures and devices. Proc. SPIE 6029, 60291A-1–9 (2006)
Maslyanchuk, O.L., Kosyachenko, L.A., German, I.I., Rarenko, I.M., Gnatyuk, V.A., Aoki, T.: Electrical and optical properties of Hg3In2Te6 single crystals. Phys. Status Solidi C 6(5), 1154–1157 (2009)
Kosyachenko, L.A., Kabanova, I.S., Sklyarchuk, V.M., Sklyarchuk, O.F., Rarenko, I.M.: Hg3In2Te6-based photodiodes for fiber optic communication. Phys. Status Solidi A 206(2), 351–355 (2009)
Zhang, L., Zhang, X.L., Sun, W.G., Lu, Z.X.: Photoelectron characteristics of HgInTe detector. Proc. SPIE 8193, 81932X-1–7 (2011)
Rarenko, I., Korbutyak, D., Koshkin, V., Danilchenko, B., Kosyachenko, L., Fochuk, P., Sklyarchuk, V., Zakharuk, Z., Dremlyuzhenko, S., Rarenko, A., Nikonyuk, Ye., Klad’ko, V., Demchyna, L., Budzulyak, S., Vakhnyak, N., Medvid’, A., Dauksta, E.: Materials and photosensor devices with high radiation stability. Adv. Mater. Res. 1117, 107–113 (2015)
Sklyarchuk, V., Gnatyuk, V., Aoki, T.: Hg3In2Te6-based radiation and temperature stable photodetectors. Proc. SPIE 10766, 107660R-1–7 (2018)
Sze, S.M., Ng, K.K.: Physics of semiconductor devices, 3rd edn. Wiley, Hoboken, New Jersey (2007)
Mönch, W.: Semiconductor surfaces and interfaces. Springer, Berlin, Heidelberg, New York (1993)
Kochubey, V.A., Atuchin, V.V., Pokrovsky, L.D., Soldatenkov, I.S., Troitskaia, I.B., Kozhukhov, A.S., Kruchinin, V.N.: Structure, microrelief and optical properties of chromium films deposited by sublimation in vacuum. Lett. Mater. 3(4), 326–329 (2013)
Yakimov, A.I., Dvurechenskii, A.V., Nikiforov, A.I., Chaikovskii, S.V., Tiis S.A.: Ge/Si photodiodes with embedded arrays of Ge quantum dots for the near infrared (1.3–1.5 μm) region. Semiconductors 37(11), 1345–1349 (2003)
Acknowledgement
This research was partly supported by the following research projects: “Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments” (The 2019 Cooperative Research at Research Center of Biomedical Engineering, Japan, grant number 2022), “Development of perovskite single crystal X/gamma-ray detectors for environmental radioactive contamination monitoring” (The Short-term Recruitment Program of Foreign Experts in Anhui (APFEP, 2019, China), “Exploring novel perovskite single-crystal based gamma-ray detector for trace environmental radioactivity monitoring” (Program of the Joint Ukraine—The People’s Republic of China R&D Projects for the period of 2019–2020 adopted by the Ministry of Science and Technology of the People’s Republic of China, grant number CU03-15).
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Switzerland AG
About this paper
Cite this paper
Sklyarchuk, V.M., Gnatyuk, V.A., Pylypko, V.G., Aoki, T. (2020). Schottky Diode Detectors with Low Leakage Current at High Operating Voltage. In: Várkonyi-Kóczy, A. (eds) Engineering for Sustainable Future. INTER-ACADEMIA 2019. Lecture Notes in Networks and Systems, vol 101. Springer, Cham. https://doi.org/10.1007/978-3-030-36841-8_16
Download citation
DOI: https://doi.org/10.1007/978-3-030-36841-8_16
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-36840-1
Online ISBN: 978-3-030-36841-8
eBook Packages: EngineeringEngineering (R0)