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Numerical Method and Simulations

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Charge Transport in Low Dimensional Semiconductor Structures

Part of the book series: Mathematics in Industry ((TECMI,volume 31))

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Abstract

The aim is to simulate the DG-MOSFET of first figure in this chapter with the model presented in Chap. 7 consisting of the Schrödinger–Poisson block (1.25), (1.27) coupled to the energy-transport equations (7.30), (7.31).

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References

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Authors and Affiliations

  1. Department of Mathematics and Computer Science, University of Catania, Catania, Italy

    Vito Dario Camiola & Vittorio Romano

  2. Department of Mathematics and Computer Science, University of Calabria, Arcavacata di Rende, Italy

    Giovanni Mascali

Authors
  1. Vito Dario Camiola
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  2. Giovanni Mascali
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  3. Vittorio Romano
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Camiola, V.D., Mascali, G., Romano, V. (2020). Numerical Method and Simulations. In: Charge Transport in Low Dimensional Semiconductor Structures. Mathematics in Industry(), vol 31. Springer, Cham. https://doi.org/10.1007/978-3-030-35993-5_8

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