Abstract
Self-assembled In(Ga)As/GaAs quantum dots (QDs) have attracted much attention for both high-speed and ultrafast laser applications because of their fascinating optical and electronic properties. Here, we will review recent development of InAs/GaAs quantum dots and their applications to high-speed lasers and ultrafast lasers. The chapter includes two main sections, one is focusing on developing high-quality 1310 nm InAs/GaAs quantum dot structures and fabricating high-performance lasers including ultrashort cavity Fabry-Pérot (F-P) and distributed feedback (DFB) lasers. We will discuss effects of the modulation p-doping on optical properties of 1310 nm InAs/GaAs QDs and share our latest results on ultrashort cavity F-P and DFB lasers. The other is about the recent works on the development of 1550 nm InAs/GaAs quantum dot semiconductor saturable absorber mirrors (QD-SESAMs) and the realization of a high repetition rate diode-pumped solid-state and Q-switched Er-doped fiber laser mode-locked by the utilization of 1550 nm QD-SESAM.
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Wang, X., Ning, J., Zheng, C., Zhang, Z. (2020). Quantum Dot Materials Toward High-Speed and Ultrafast Laser Applications. In: Yu, P., Wang, Z. (eds) Quantum Dot Optoelectronic Devices. Lecture Notes in Nanoscale Science and Technology, vol 27. Springer, Cham. https://doi.org/10.1007/978-3-030-35813-6_7
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