Abstract
In this chapter, we describe the results of our first-principles simulations to investigate the switching mechanism of amorphous TaOx (a-TaOx) based resistive switching devices. For the Cu/a-Ta2O5/Pt atomic switch, we first discuss the atomic structure of the conductive filaments, focusing on the exploration of possible thinnest filament structure. Then we discuss the structures of interfaces between metal electrodes and a-Ta2O5, which are important in understanding Cu ion supply for the switching. For the Pt/a-TaOx/Pt resistive switch, we discuss the nature of the conductive filaments and diffusion behaviors of active ions. Here we point out the importance of Ta-Ta bonding and the non-negligible contribution of Ta diffusion under certain conditions.
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Acknowledgments
We thank Prof. Tinkun Gu, Prof. Tomofumi Tada for collaboration in the early stage of the present work. SW also thanks Prof. Shu Yamaguchi, Prof. Tsuyoshi Hasegawa, Dr. Tohru Tsuruoka, Dr Toshi Sakamoto and Dr Naoki Banno for fruitful discussion. This work was partially supported by CREST-JST “Atom transistor”, Low Power Electronics Association and Projects, the grant-in-aid for Innovation Area “Computics” by MEXT, Japan, and Global COE program “Global COE for Mechanical Systems Innovation” by MEXT, Japan.
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Watanabe, S., Xiao, B. (2020). Atomistic Simulations for Understanding Microscopic Mechanism of Resistive Switches. In: Aono, M. (eds) Atomic Switch. Advances in Atom and Single Molecule Machines. Springer, Cham. https://doi.org/10.1007/978-3-030-34875-5_6
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DOI: https://doi.org/10.1007/978-3-030-34875-5_6
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