Abstract
Atom switches embedded in read-only memories (ROMs) and field programmable gate arrays (FPGAs) were investigated in terms of single event effects (SEEs). In this study, their radiation tolerance against single event upset (SEU) was demonstrated with an LET of up to 68.9 MeV/(mg/cm2), irrespective of the voltage conditions or logic states of the cells.
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Acknowledgement
The authors wish to gratefully acknowledge valuable assistance provided by the members of the TIARA accelerator operation group at QST. The authors would also like to thank Ryoei Technica Corp. for its technical support.
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Takeuchi, K., Tada, M., Sakamoto, T., Kuboyama, S. (2020). An Evaluation of Single Event Effects by Heavy Ion Irradiation on Atom Switch ROM/FPGA. In: Aono, M. (eds) Atomic Switch. Advances in Atom and Single Molecule Machines. Springer, Cham. https://doi.org/10.1007/978-3-030-34875-5_4
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DOI: https://doi.org/10.1007/978-3-030-34875-5_4
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