Abstract
We report on the results of the studies of the features of radiative recombination of iron-doped gallium antimonide at T = 2 K, in the absence of an external magnetic field. Specimens were prepared by a modified method of zone melting. The concentration of iron incorporated in the melt varied in the range of 0.001–3 (atomic percent). The studied specimens exhibited p-type conductivity. It was demonstrated that in gallium antimonide iron created a shallow acceptor level with the ionization energy of (22 ± 0.2) meV. In addition, the structure of the radiative recombination spectra was determined and the concentration of radiative centers was found out.
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References
Aguekian, V.F.: Phys. Solid State 44(11), 1421 (2002). (in Russian)
Omelianovschii, E.M., Fistuli, V.I., Balagurov, A.A., Ivleva, V.S., Karasheev, V.V., Melvitsckii, M.G.: Semiconductors, 9, 576 (1975). (in Russian)
Ippolitova, G.K., Omelianovschii, G.M., Pavlov, N.M., Nashelischii A.Y., Jakobson, S.V.: The behavior of the Fe impurity in 1pR and the effect of covalency on the EPR spectrum of the Fe2+ ion in Td symmetry compounds. ShGP 11(7), 1315–1320 (1977)
Andrianov, D.G., Grinshtein, P.M., Ippolitova, G.K., Omelianovschii, E.M., Suchkova, N.I., Fistuli, V.I.: Semiconductors 10, 1173 (1976). (in Russian)
Vinogradova, K.I., Ivleva, V.S., Ilimenkov, G.I., Nasledov, D.N., Smeshannikova, Y.S., Tashkhodiev, T.K.: Semiconductors 6, 1845 (1972). (in Russian)
Georgitse, E.I., Gutsulyak, L.M., Ivanov-Omschii, V.I., Pogorletschy V.M., Titkov, A.N.: Мелкий акцепторный уровень марганца в антимониде галлия. J. Tech. Phys. Lett. 17(17), 21 (1991). (in Russian)
Omelianovschii, E.M., Fistuli, V.I.: Impurities of Transition Metals in Semiconductors. Metallurgy, p. 192 (1983). (in Russian)
Plaza, J.L., Dieguez, E.: Experimental analysis of Mn segregation in Bridgman-grown gallium antimonide: dependency on the ampoule radius. Cryst. Res. Technol. 39(5), 396 (2003)
Georgitse, E.I., Gutsulyak, L.M., Ivanov-Omskii, V.I., Masterov, V.F., Smirnov, V.A., Yuldashev, S.U.: Photoluminescence of manganese-doped gallium antimonide. Sov. Phys. Semicond. 25, 1180 (1991)
Krukovskaya, L.P., Mironov, I.S., Titkov, A.N.: Shallow acceptor level of Fe in GaSb. Semiconductors, 12(4) 689–692 (1978)
Aronov, A.G., Pikus, G.E., Titkov, A.N.: Spin relaxation of conduction electrons in p-type Ill-V compounds. JETP 57(3), 1170 (1983)
Mihălache, A.: PL spectra of the Fe-doped Gallium antimonide. Book of abstracts. In: 10th International Balkan workshop on Applied Physics, p. 132 (2009)
Chidiey, T.R., Haywood, S.K., Hentiques, A.B., Masen, N.J., Nicolas, R.T., Walken, D.J.: Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy. Semicond. Sci. Technol, 6(6), 45 (1991)
Fock, M.V.: Proc. Phys. Inst. Acad. Sci. 59, 3–24 (1972). (in Russian)
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Mihalache, A. (2020). Features of Radiative Recombination of Iron-Doped Gallium Antimonide. In: Tiginyanu, I., Sontea, V., Railean, S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Cham. https://doi.org/10.1007/978-3-030-31866-6_6
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DOI: https://doi.org/10.1007/978-3-030-31866-6_6
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