Abstract
Al-doped ZnO thin films have been prepared by spray pyrolysis, which facilitates the incorporation of a higher percentage of dopant atoms. The vacuum thermally annealed at 420 °C temperature thin films have been characterized by X-ray diffraction (XRD), optical spectroscopy. Electrical conductivity and the Hall effect are investigated in the temperature interval (77–300) K. X-ray analysis results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. Different characters of the temperature dependence of conductibility are observed in the Al-doped ZnO films vacuum thermally annealed at 420 °C temperature. In all cases, the conductivity, mobility carriers and carriers’ concentration of ZnO thin films obtained under Ar are higher than under O2 atmosphere, unless they are not doped. of your paper no longer than 300 words.
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Acknowledgements
The authors would like to thank the Ministry of Education, Culture and Research of Republic of Moldova for supporting this research by funding the grant 15.817.02.39A. In addition, authors extend their appreciation to the Research Institute of Electronic, Shizuoka University for co-funding this project.
Conflict of Interest The authors declare that they have no conflict of interest.
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Potlog, T. et al. (2020). Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films. In: Tiginyanu, I., Sontea, V., Railean, S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Cham. https://doi.org/10.1007/978-3-030-31866-6_18
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