Abstract
Continuous increase in the die size accompanied by reduction of the metal line cross sections and, hence by increase of the current densities governed by a technology scaling, results in an increasingly difficult EM signoff when the traditional EM checking approaches are employed. In these approaches, the EM-induced failure rates of the individual interconnect lines are considered as a measure of EM-induced reliability and, in the extreme end, a mean time to failure (MTTF) of the weakest segment is accepted as a measure for the whole chip lifetime. It results in a very conservative design rules for the current densities that can be used in the chip design for a particular technology node in order to avoid EM failure.
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Tan, S., Tahoori, M., Kim, T., Wang, S., Sun, Z., Kiamehr, S. (2019). EM Assessment for Power Grid Networks. In: Long-Term Reliability of Nanometer VLSI Systems. Springer, Cham. https://doi.org/10.1007/978-3-030-26172-6_7
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DOI: https://doi.org/10.1007/978-3-030-26172-6_7
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