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Introduction

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Long-Term Reliability of Nanometer VLSI Systems

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Abstract

The first part of this book focused on interconnect aging effects. In this part we focus on aging effects in active components and in particular transistors. This chapter introduces an overview of transistor aging provoked by different wearout physical effects such as Bias Temperature Instability (BTI), Hot Carrier Injection (HCI), Random Telegraph Noise (RTN), and Time Dependent Dielectric Breakdown (TDDB). We discuss how this transistor aging effect is affected by various process and runtime variation effects and the impact of technology down-scaling on transistor aging reliability.

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Authors and Affiliations

  1. Department of Computer Science and Engineering, University of California, Riverside, CA, USA

    Sheldon Tan

  2. Karlsruhe Institute of Technology, Karlsruhe, Germany

    Mehdi Tahoori & Shengcheng Wang

  3. Department of Electrical & Computer Engineering, University of California, Riverside, CA, USA

    Taeyoung Kim & Zeyu Sun

  4. Robert Bosch Starter Generator GmbH, Stuttgart, Germany

    Saman Kiamehr

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Tan, S., Tahoori, M., Kim, T., Wang, S., Sun, Z., Kiamehr, S. (2019). Introduction. In: Long-Term Reliability of Nanometer VLSI Systems. Springer, Cham. https://doi.org/10.1007/978-3-030-26172-6_13

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