Abstract
Phonon excitations are necessary to describe the optical properties of semiconductors and of insulators in the IR. Plasmons determine the optical properties of metals from the IR through the visible to the near UV, and in semiconductors, if present at all, they contribute along with the phonons to the IR spectra. Excitons, on the other hand, determine together with their continuum states (or the band-to-band transitions) the optical properties around and above the band gap, i.e., in the visible including the near UV and IR in the case of semiconductors and in the (V)UV for insulators. Although inorganic insulators like the alkali halides and organic ones such as anthracene have specific optical properties, many of the aspects presented in the following for excitons in semiconductors also apply to them. We will present in this chapter the intrinsic linear optical properties of excitons in bulk semiconductors starting from semiconductors with a dipole-allowed, direct band-to-band transition. They exhibit dipole-allowed excitons with the highest oscillator strength. Values of their longitudinal–transverse splitting \(\Delta _{\text {LT}}\) range from 0.1 to beyond 10 meV. However, not all excitons in this group of semiconductors have high oscillator strength. Also some excitons in semiconductors with dipole-forbidden band-to-band transitions may be dipole allowed, but with considerably lower oscillator strength. We will review these cases in Sect. 21.2, ending with some comments on indirect gap materials and intra-excitonic transitions (Sect. 21.3). Again, several experimental techniques will be introduced like use of integrating spheres, spectroscopy in momentum space and attenuated total reflectance.
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References
M. Hayashi, K. Katsuki, J. Phys. Soc. Jpn. 7, 599 (1952)
F. Urbach, Phys. Rev. 92, 1324 (1953)
R.J. Elliot, Phys. Rev. 108, 1384 (1957). Polarons and Excitons, ed. by C.G. Kupper, G.D. Whitfield (Oliver and Boyd, Edinburg, 1963), p. 269
W. Martienssen, J. Phys. Chem. Solids 2, 257 (1957)
D. Dutton, Phys. Rev. 112, 785 (1958)
J.J. Hopfield, Phys. Rev. 112, 1555 (1958)
G. Heiland, E. Mollwo, F. Stöckmann, Solid State Phys. 8, 191 (1959). See also E. Mollwo, Reichsber. Phys. 1, 1 (1944)
J.J. Hopfield, J. Phys. Chem. Solids 15, 97 (1960)
J.J. Hopfield, D.G. Thomas, Phys. Rev. 128, 2135 (1962)
S.J. Pekar, Sov. Phys. Solid State 4, 953 (1962)
M.D. Sturge, Phys. Rev. 127, 768 (1962)
J.J. Hopfield, D.G. Thomas, Phys. Rev. 132, 563 (1963)
M.N. Kabler, Phys. Rev. A 136, 1296 (1964)
G.D. Mahan, J.J. Hopfield, Phys. Rev. A 135, 428 (1964)
M. Cardona, G. Harbeke, Phys. Rev. A 137, 1467 (1965)
M. Cardona, M. Weinstein, G.A. Wolff, Phys. Rev. A 140, 633 (1965)
D.L. Greenaway, G. Harbeke, J. Phys. Soc. Jpn. 21(Suppl.), 151 (1966)
G. Kuwabara, A. Misu, H. Sasaki, J. Phys. Soc. Jpn. 21(Suppl.), 148 (1966)
J. Ringeissen, Phys. Lett. 22, 571 (1966)
N.J. Harrick, Internal Reflection Spectroscopy (Wiley, New Jersey, 1967)
M.N. Kabler, D.S. Patterson, Phys. Rev. Lett. 19, 652 (1967)
Y. Onodera, Y. Toyozawa, J. Phys. Soc. Jpn. 22, 833 (1967)
Y.P. Varshni, Physica 34, 149 (1967)
W.Y. Liang, A.D. Yoffe, Phys. Rev. Lett. 20, 59 (1968)
B. Segall, G.D. Mahan, Phys. Rev. 171, 935 (1968)
Y. Toyozawa, J. Hermanson, Phys. Rev. Lett. 21, 1637 (1968)
J. Voigt, F. Spiegelberg, Phys. Status Solidi B 30, 659 (1968)
E.O. Kane, Phys. Rev. 180, 852 (1969)
O. Madelung, Grundlagen der Halbleiterphysik, vol. 71, Heidelberger Taschenbücher (Springer, Berlin, 1970)
J.P. Walter et al., Phys. Rev. B 1, 2661 (1970)
D. Fröhlich, E. Mohler, P. Wiesner, Phys. Rev. Lett. 26, 554 (1971)
M.V. Kurik, Phys. Status Solidi A 8, 9 (1971)
Y. Petroff, M. Balkanski, Phys. Rev. B 3, 3299 (1971)
H. Sumi, Y. Toyozawa, J. Phys. Soc. Jpn. 31, 342 (1971)
D.D. Sell, P. Lawaetz, Phys. Rev. Lett. 26, 311–314 (1971)
A. Bivas et al., Opt. Commun. 6, 142 (1972)
H.B. Bebb, E.W. Williams, Semicond. Semimet. 8, 182 (1972)
J.D. Dow, D. Redfield, Phys. Rev. 85, 94 (1972)
L. Kalok, J. Treusch, Phys. Status Solidi A 52, K125 (1972)
R.L. Weiher, W.C. Tait, Phys. Rev. B 5, 623 (1972)
E.W. Williams, H.B. Bebb, Semicond. Semimet. 8, 321 (1972)
K. Hümmer, Phys. Status Solidi B 56, 249 (1973)
G.H. Jensen, T. Skettrup, Phys. Status Solidi B 60, 169 (1973)
E. Swenberg, N. Geacintov, Org. Mol. Photophys. 1, 489 (1973)
M. Bettini, S. Suga, R. Hanson, Solid State Commun. 15, 1885 (1974)
S. Suga, T. Koda, Phys. Status Solidi B 66, 255 (1974)
E. Tomzig, R. Helbig, Solid State Commun. 15, 1513 (1974) and J. Lumin. 14, 403 (1976)
A. Frova et al., Phys. Rev. Lett. 34, 1572 (1975)
P. Hiesinger et al., Phys. Status Solidi B 67, 641 (1975)
C. Klingshirn, Dissertation Universität Erlangen (1975)
V.A. Kiselev, B.S. Razbirin, I.N. Uraltsev, Phys. Status Solidi B 72, 161 (1975)
J. Lagois, K. Hümmer, Phys. Status Solidi B 72, 393 (1975)
R.W. Pohl, Optik und Atomphysik, 13th edn. (Springer, Berlin, 1976)
F. Spiegelberg, E. Gutsche, J. Voigt, Phys. Status Solidi B 77, 233 (1976)
E. Strauss, V. Gerhardt, H. Riederer, J. Lumin. 12/13, 239 (1976)
S. Suga et al., J. Lumin. 12/13, 109 (1976)
G.A. Thomas, M. Capizzi, in Proceedings of the 13th International Conference on the Physics of Semiconductors, Rome, ed. by F.G. Fumi (North-Holland, Amsterdam/New York, 1976), p. 915
T. Timusk et al., Phys. Rev. B 13, 3511 (1976)
A. Coret, A. Fort, Il Nuovo Cim. 39B, 544 (1977)
H. Venghaus, S. Suga, K. Cho, Phys. Rev. B 16, 4419 (1977)
G. Winterling, E.S. Koteles, M. Cardona, Phys. Rev. Lett. 39, 1286 (1977)
P.D. Bloch, C. Schwab, Phys. Rev. Lett. 41, 514 (1978)
G.G. Grosso et al., Solid State Commun. 25, 435 (1978)
K. Hümmer, Habilitation Thesis, Erlangen (1978)
K. Hümmer, P. Gebhardt, Phys. Status Solidi B 85, 271 (1978)
J. Lagois, B. Fischer, Festkörperprobleme/Adv. Solid State Phys. 18, 197 (1978)
W. Stößel, H.J. Wagner, Phys. Stat. Sol. (b) 89, 403 (1978)
T. Timusk et al., Solid State Commun. 25, 217 (1978)
R.G. Ulbrich, C. Weisbuch, Festkörperprobleme/Adv. Solid State Phys. 28, 217 (1978)
W. Ekardt, K. Lösch, D. Bimberg, Phys. Rev. B 20, 3303 (1979)
Y. Masumoto et al., J. Phys. Soc. Jpn. 47, 1844 (1979)
A. Mysyrowicz, D. Hulin, A. Antonetti, Phys. Rev. Lett. 43, 1123 (1979)
J. Puls, J. Voigt, Phys. Status Solidi B 94, 199 (1979)
B. Sermage, G. Fishman, Phys. Rev. Lett. 43, 1043 (1979)
R.G. Ulbrich, G.W. Fehrenbach, Phys. Rev. Lett. 43, 963 (1979)
J. Voigt, F. Spiegelberg, M. Senoner, Phys. Status Solidi B 91, 189 (1979)
I. Broser, M. Rosenzweig, Phys. Rev. B 22, 2000 (1980)
K. Bohnert, G. Schmieder, C. Klingshirn, Phys. Status Solidi B 98, 175 (1980)
I. Broser, M. Rosenzweig, Solid State Commun. 36, 1027 (1980)
W. Dreybrodt et al., Phys. Rev. B 21, 4692 (1980)
M. Fukui, V.C.-Y. So, G.I. Stegeman, Phys. Rev. B 22, 1010 (1980)
I.V. Makarenko, I.N. Uraltsev, V.A. Kiselev, Phys. Status Solidi B 98, 773 (1980)
E.S. Koteles, G. Winterling, Phys. Rev. Lett. 44, 948 (1980)
I. Broser et al., Solid State Commun. 39, 1209 (1981)
K. Cho, Y. Yamane, Solid State Commun. 40, 121 (1981)
T. Itho et al., Solid State Commun. 37, 925 (1981)
W.B. Jackson et al., Appl. Opt. 20, 1333 (1981)
C. Klingshirn, H. Haug, Phys. Rep. 70, 315 (1981)
R. Kuhnert, R. Helbig, K. Hümmer, Phys. Status Solidi B 107, 83 (1981)
R. Kuhnert, R. Helbig, App. Opt. 20, 4149 (1981)
J. Lagois, Phys. Rev. B 23, 5511 (1981)
D.C. Reynolds, T.C. Collins, Excitons: Their Prooperties and Uses (Academic, New York, 1981)
Ch. Uihlein, D. Fröhlich, R. Kenklies, Phys. Rev. B 23, 2731 (1981)
G. Blattner et al., Phys. Rev. B 25, 7413 (1982)
G. Blattner, private communication
I. Hirabayashi, Q. Tokura, T. Kada, J. Phys. Soc. Jpn. 51, 2934 (1982)
M. Itoh, I. Ogura, J. Appl. Phys. 53, 5140 (1982)
N.V. Joshi, B. Vincent, Solid State Commun. 44, 439 (1982)
C. Klingshirn, in Application of High Magnetic Fields in Semiconductor Physics, Lecture Notes in Physics, vol. 177 ed. by G. Landwehr (Springer, Berlin, 1982)
O. Madelung, U. Rössler (ed.), Landolt–Börnstein. New Series, Group III, vol. 17 a to i, 22 a and b, 41 A to D (Springer, Berlin, 1982–2001)
V.M. Agranovich, A.A. Maradudin (eds.), Modern Problems in Condensed Matter Sciences, (North Holland, Amsterdam, 1982 ff) Surface Polaritons, vol. 1 ed. by V.M. Agranovich, D.L. Mills. Surface Excitations, vol. 9, ed. by V.M. Agranovich, R. Landon
Y. Onodera, T. Oshikiri, J. Phys. Soc. Jpn. 49, 1845 (1980) and ibid. 51, 2194 (1982)
S. Permogorov, in Excitons, vol. 2, Modern Problems in Condensed Matter Sciences, ed. by E.I. Rasha, M.D. Sturge (North Holland, Amsterdam, 1982), p. 177
M. Rosenzweig, Ph.D. Thesis, TU Berlin (1982)
T. Skettrup, Phys. Status Solidi B 109, 663 (1982)
L. Schultheis, J. Lagois, Solid State Commun. 44, 1557 (1982) and Phys. Rev. B 29, 6784 (1984)
R. Grasser, R. Scharmann, N.A.T.O.A.S.I. Ser, B 88, 317 (1983)
W. Maier, G. Schmieder, C. Klingshirn, Z. Phys. B 50, 193 (1983)
Y. Segawa, Y. Aoyagi, S. Namba, J. Phys. Soc. Jpn. 52, 3664 (1983)
H. Schweizer et al., Phys. Rev. Lett. 51, 698 (1983)
M. Fukui, A. Kamada, O. Tada, J. Phys. Soc. Jpn. 53, 1185 (1984)
M.V. Lebedev et al., JETP Lett. 39, 366 (1984)
M. Matsushita, J. Wicksted, H.Z. Cummins, Phys. Rev. B 29, 3362 (1984)
T. Mita, N. Nagasawa, Solid State Commun. 44, 1003 (1984)
A. Manoogian, J.C. Woolley, Can. J. Phys. 62, 285 (1984)
S. Nikitine, J. Phys. Chem. Solids 45, 949 (1984)
R. Ruppin, Phys. Rev. B 29, 2232 (1984)
T. Shigenari, X.Z. Lu, H.Z. Cummins, Phys. Rev. B 30, 1962 (1984)
J. Wicksted et al., Phys. Rev. B 29, 3350 (1984)
F. Beerwerth, D. Fröhlich, Phys. Rev. Lett. 55, 2603 (1985)
B. Hönerlage et al., Phys. Rep. 124, 161 (1985)
K. Inoue et al., Solid State Commun. 54, 193 (1985)
J.G. Liebler, S. Schmitt-Rink, H. Haug, J. Lumin. 34, 1 (1985)
F. Beerwerth, D. Fröhlich, Phys. Rev. Lett. 57, 1344 (1986)
M. Ueta, H. Kazanki, K. Kobayashi, Y. Toyozawa, E. Hanamura, Excitonic Processes in Solids, Springer Series in Solid State Sciences, vol. 60 (Springer, Berlin, 1986)
C.W. Tang, S.A. Vanslyke, Appl. Phys. Lett. 51, 913 (1987)
A. Juhl, D. Bimberg, J. Appl. Phys. 64, 303 (1988)
D. Labrie et al., Phys. Rev. Lett. 61, 1882 (1988)
J.H. Burroughes et al., Nature 347, 539 (1990)
H. Kuzmany, Festkörperspektroskopie (Springer, Berlin, 1990)
J.D. Lambkin et al., Appl. Phys. Lett. 57, 1986 (1990)
S. Rudin, T.L. Reinecke, B. Segall, Phys. Rev. B 42, 11218 (1990)
D. Bimberg, T. Wolf, J. Böhrer, NATO ASI Series B, Advances in nonradiative processes in solids, B. Di Bartolo ed. vol. 249 (Plenum, New York, 1991), p. 529
D. Fröhlich et al., Phys. Rev. Lett. 67, 2343 (1991)
T. Ogawa, T. Takagahara, Phys. Rev. B 43, 14325 (1991)
R. Ulbrich, in Materials Science and Technology, vol. 4, ed. by W. Schröter (VCH, Weinheim, 1991), p. 65
M. Fiebig, D. Fröhlich, Ch. Pahlke-Lerch, Phys. Status Solidi B 177, 187 (1993)
H. Haug, S.W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors, 2nd edn. (World Scientific, Singapore, 1993)
C. Klingshirn, N.A.T.O.A.S.I. Ser, B 301, 119 (1993)
J.L. Lin, J.P. Wolfe, Phys. Rev. Lett. 71, 1222 (1993)
F.M. Mirabella (ed.), Internal Reflection Spectroscopy: Theory and Applications (Marcel Dekker Inc., New York, 1993)
Y. Ma et al., Phys. Rev. Lett. 71, 3725 (1993)
N. Peyghambarian, S.W. Koch, A. Mysyrowicz, Introduction to Semiconductor Optics (Prentice Hall, Englewood Cliffs, 1993)
M. Vening, D.J. Dunstan, K.P. Homewood, Phys. Rev. B 48, 2412 (1993)
D. Fröhlich in Nonlinear Spectroscopy of Solids: Advances and Application (1993). NATO ASI Series B, vol. 339 (Plenum Press, New York, 1994), p. 289
F. Fuchs et al., Superlatt. Microstruct. 16, 35 (1994)
E.I. Haskal, Y. Zhang, P.E. Burrows, S.R. Forrest, Chem. Phys. Lett. 219 325 (1994); Phys. Rev. B 51, 4449 (1995)
C. Janowitz et al., Phys. Rev. B 50, 2181 (1994)
M. Watanabe, T. Hayashi, J. Phys. Soc. Jpn. 63, 785 (1994)
F. Bassani, G. Czajkowski, A. Terdicucci, Z. Phys. B 98, 39 (1995)
E. Daub, P. Würfel, Phys. Rev. Lett. 74, 1020 (1995)
G.E. van Dorssen et al., Rev. Sci. Instrum. 66, 1480 (1995)
H. Schneider, K. Köhler, Phys. Rev. B 52, R14364 (1995)
P. Würfel, S. Finkbeiner, E. Daub, Appl. Phys. A 60, 67 (1995)
V. Bulovic et al., Chem. Phys. 210, 1 (1996)
H. Kalt, Optical Properties of IIIV Semiconductors: The Infuence of Multi-Valley Band Structures, Springer Series in Solid-State Sciences, vol. 120 (Springer, Berlin, 1996)
A. Mysyrowicz et al., Phys. Rev. Lett. 77, 896 (1996)
U. Neukirch et al., Phys. Status Solidi B 196, 473 (1996)
S. Tanaka, Y. Kayanuma, Solid State Commun. 100, 77 (1996)
N. Grigorchuk, Phys. Lett. A 231, 245 (1997)
A. Jolk, Diplom Thesis, Universität Karlsruhe (TH) (1997)
S. Nüsse et al., Phys. Rev. B 55, 4620 (1997)
U. Neukirch et al., Phys. Rev. B 55, 15408 (1997) and ibid. 57, 9208 (1998)
M.Y. Shen et al., Phys. Rev. B 56, 13 066 (1997)
J. Wrzensinski, D. Fröhlich, Phys. Rev. B 56, 13087 (1997)
R. Westphäling et al., J. Lumin. 72–74, 980 (1997)
A. Jolk, C. Klingshirn, Phys. Stat. Sol. (b) 206, 841 (1998)
M. Kira, F. Jahnke, S.W. Koch, Phys. Rev. Lett. 81, 3263 (1998)
K. Henneberger, Phys. Rev. Lett. 80, 2889 (1998)
R. Westphäling et al., J. Appl. Phys. 84, 6871 (1998); and J. Cryst. Growth 184/185, 1072 (1998)
A. Agui et al., Phys. Rev. B 59, 10792 (1999)
J.S. Dodge et al., Phys. Rev. Lett. 83, 4650 (1999)
L. Hanke, D. Fröhlich, A.L. Ivanov, P.B. Littlewood, H. Stolz, Phys. Rev. Lett. 83, 4365 (1999)
A. Jolk et al., in Proceedings of the 24th International Conference on the Physics of Semiconductors, Jerusalem, 1998, CD, File II C4 (1999)
R. Pässler, Phys. Status Solidi B 216, 975 (1999)
A.V. Rodina et al., Phys. Status Solidi B 216, 21 (1999)
L. Hanke et al., Phys. Status Solidi B 221, 287 (2000)
J. Tignon et al., Phys. Rev. Lett. 84, 3382 (2000)
M. Jörger et al., Phys. Rev. B 64, 113204 (2001)
K. Johnsen, G.M. Kavoulakis, Phys. Rev. Lett. 86, 858 (2001)
J.S. Nägerl et al., Phys. Rev. B 63, 235202 (2001)
A.V. Rodina et al., Phys. Rev. B 64, 115204 (2001)
H.C. Schneider et al., Phys. Rev. B 63, 045202 (2001)
R. Lécuiller et al., Phys. Rev. B 66, 125205 (2002)
S.F. Chichibu et al., J. Appl. Phys. 93, 756 (2003)
G. Dasbach et al., Phys. Status Solidi B 238, 541 (2003) and Phys. Rev. Lett. 91, 107401 (2003)
T. Fleck, M. Schmidt, C. Klingshirn, Phys. Status Solidi (a) 198, 248 (2003)
M. Jörger et al., Phys. Status Solidi B 238, 470 (2003)
R.A. Kaindl et al., Phys. Status Solidi B 238, 451 (2003)
M. Knupfer, Appl. Phys. A 77, 623 (2003)
H. Zhao, H. Kalt, Phys. Rev. B 68, 125309 (2003)
S. Glutsch, Excitons in Low-Dimensional Semiconductors (Springer, Berlin, 2004)
M. Jörger, Ph.D. Thesis, Karlsruhe (2004); J. Lumin. 112, 21 (2005)
M. Kuwata-Gonokami et al., J. Phys. Soc. Jpn. 73, 1065 (2004) and Solid State Commun. 134, 127 (2005)
K. Karpinska, P.H.M. van Loosdrecht, I.P. Handayani, Solid state Commun. 134, (2005); EXCON 04, Cracow, 2004; J. Lumin. 112, 17 (2005)
C. Klingshirn et al., Solid State Commun. 134, 155 (2005)
T. Koida et al., Appl. Phys. Lett. 84, 1079 (2004)
S. Schumacher et al., Phys. Rev. B 70, 235340 (2004)
X. Yang, D. Neher, D. Hertel, T. Daubler, Adv. Mater. 16, 161 (2004)
D. Fröhlich et al., Solid State Commun. 134, 139 (2005)
J. Grabowska et al., Phys. Rev. B 71, 115439 (2005)
R. Huber et al., Phys. Rev. B 72, 161314 (2005)
R. Hauschild et al., Phys. Status Solidi C 3, 976 (2006)
R. Huber et al., Phys. Rev. Lett. 96, 017402 (2006)
S.W. Koch et al., Nat. Mater. 5, 523 (2006)
J. Kasprzak et al., Nature 443, 409 (2006)
T. Tayagaki et al., Phys. Rev. B 74, 245127 (2006)
J. Brandt et al., Phys. Rev. Lett. 99, 217403 (2007)
C. Klingshirn, Phys. Status Solidi B 244, 3027 (2007)
C. Klingshirn et al., Phys. Rev. B 75, 115203 (2007)
M. Hauser et al., Appl. Phys. Lett. 92, 211105 (2008)
K.G. Lagoudakis et al., Nat. Phys. 4, 706 (2008)
A. Köhler, H. Pässler, Mater. Sci. Eng. R 66, 71 (2009)
T. Leinß et al., Phys. Status Solidi C 6, 156 (2009)
M. Fox, Optical Properties of Solids, 2nd edn. (Oxford University Press, Oxford, 2010)
C. Klingshirn, Phys. Status Solidi B 247, 1424 (2010)
C. Klingshirn, B.K. Meyer, A. Waag, A. Hoffmann, J. Geurts, Zinc Oxide: From Fundamental Properties Towards Novel Applications, Springer Series in Materials Science, vol. 120 (Springer, Heidelberg, 2010)
E. Wertz et al., Nat. Phys. 6, 860 (2010)
S. Tanaka et al., Phys. Status Solidi A 207, 1474 (2010)
P.Y. Yu, M. Cardona, Fundamentals of Semiconductors, 4th edn. (Springer, Berlin, 2010)
H.M. Gibbs, G. Khitrova, S.W. Koch, Nat. Photonics 5, 275 (2011)
W. Brütting, C. Adachi (eds.), Physics of Organic Semiconductors, (Wiley-VCH, Weinheim, 2012)
M. Milosevic, Internal Reflection and ATR Spectroscopy (Wiley, New Jersey, 2012)
I.E. Castelli et al., APL Mater. 2, 081514 (2014)
M. Grätzel, Nat. Mater. 13, 838 (2014)
T. Kazimierczuk, D. Fröhlich, S. Scheel, H. Stolz, M. Bayer, Nature 514, 343 (2014)
M. Saba et al., Nat. Commun. 5, 5049 (2014)
C, Sekine et al., Sci. Technol. Adv. Mater. 15, 034203 (2014)
A. Miyata et al., Nat. Phys. 11, 582 (2015)
J. Thewes et al., Phys. Rev. Lett. 115, 027402 (2015)
M. Aßmann, J. Thewes, D. Fröhlich, M. Bayer, Nat. Mater. 15, 741 (2016)
K. Galkowski et al., Energy Environ. Sci. 9, 962 (2016)
B.R. Sutherland, E.H. Sargent, Nat. Photonics 10, 295 (2016)
F. Schöne et al., Phys. Rev. B 93, 075203 (2016)
F. Schweiner, J. Main, M. Feldmaier, G. Wunner, C. Uihlein, Phys. Rev. B 93, 195203 (2016)
S.A. Veldhuis et al., Adv. Mater. 28, 6804 (2016)
E.M. Hutter et al., Nat. Mater. 16, 115 (2017)
J. Heckötter et al., Phys. Rev. B 96, 125142 (2017)
J. Heckötter et al., Phys. Rev. B 95, 035210 (2017)
J.E. Moser, Nat. Mater. 16, 4 (2017)
F. Schweiner et al., Phys. Rev B 95, 035202 (2017)
Z. Yang et al., J. Phys. Chem. Lett. 8, 1851 (2017)
T. Ruf et al., Appl. Phys. Lett. 112, 083902 (2018). https://doi.org/10.1063/1.5017943
T. Ruf et al., in IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), (Waikoloa, HI, 2018)
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Problems
21.1
Make a plot of the longitudinal-transverse splitting of \(n_{{\text {B}}}\,{=}\,1\) exciton resonances as a function of the exciton binding energy. Include only semiconductors with direct, dipole-allowed band-to-band transitions. Compare with similar figures in Chap. 20.
21.2
Consider a band-to-band transition in a direct-gap semiconductor neglecting the Coulomb interaction between electron and hole and calculate the absorption spectrum for a dipole-allowed and a dipole-forbidden transition, i.e. for a transition with a matrix element varying linearly with \(\varvec{k}\).
21.3
Consider the \(n_{\text {B}} = 1\) A\(\Gamma _{5}\)-polariton resonances in CdS (Fig. 21.3b) and determine for a light beam incident at 45\(^\circ \) to the surface (\(\varvec{E} \perp \varvec{c}\), \(\varvec{k}\perp \varvec{c}\)) the length and direction of the wave vectors of the propagating modes in the sample and their phase and group velocities. Select a few characteristic photon energies. Explain the term “spatial dispersion”.
21.4
Explain the differences between the concepts of polaritons with spatial dispersion and of birefringence.
21.5
Can the transition energy of a dipole-allowed intra-excitonic transition 1s \(\rightarrow \) 2p coincide with the energy of a dipole-allowed TO phonon?
21.6
Consider Fig. 21.8e for \(\varvec{E}\) perpendicular to \(\varvec{c}\). In the low temperature limit the A and B excitons are resolved, at 295 K no longer due to their increasing homogeneous broadening.
(a) Deduce the exciton binding energy in ZnO from the 4.2 K spectra and mark then the position of the bandgap at 295 K.
(b) Use equations like a square root absorption edge or an equation for the Tauc regime e.g., from [10K1] to fit the low energy tail of the absorption spectrum. Convince yourself that such a fit works only over a limited range of absorption coefficients \(\alpha (\hbar \omega )\) and verify that the extrapolation of this fit to \(\alpha (\hbar \omega )=0\) does give the correct value of the bandgap. Demonstrate also that the maximum of the derivative \(\mathrm{d}\alpha (\hbar \omega ) /\mathrm{d}\hbar \omega \) does not coincide with the gap.
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Kalt, H., Klingshirn, C.F. (2019). Optical Properties of Intrinsic Excitons in Bulk Semiconductors. In: Semiconductor Optics 1. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-24152-0_21
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