Abstract
Low-dimensional semiconductor structures are nowadays the centerpiece of many electronic and optoelectronic devices. This is a result of their interesting properties like carrier confinement and localization, tunability of electronic energies by geometric dimension, or a spectrally narrow and high density of states. But low-dimensional structures are also perfect model systems for quantum mechanics and lead to new physics phenomena like the quantum Hall effect. We will discuss here the electronic states and wavefunctions in (square-well) potentials of different dimensionalities. We will address the consequences of finite size and depth of the potentials and how the bandstructure characteristics affect the electronic states. Starting with single quantum wells (QWs) we proceed via coupled QWs to superlattices where miniband formation leads to transport perpendicular to the quantization layers. We focus in particular on a novel class of materials—mono-layer semiconductors—like graphen and transition-metal dichalcogenides. These materials show extraordinary electronic properties due to location of their bandgaps at the corners of a hexagonal Brillouin zone leading to the phenomena of valleytronics. We then describe electronic states in quantum wires, rods and dots and how to realize such systems.
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17.1
Calculate the effective density of states per unit volume at 300 K for electrons and holes in bulk GaAs and the density of states per unit area in a GaAs QW. Calculate the corresponding density per volume for \(l_{z}\,{=}\,10\,\text {nm}\).
17.2
Calculate the positions of the first three quantized electron levels for a GaAs quantum well assuming infinitely high barriers and the realistic band discontinuity to Al\(_{0.40}\)Ga\(_{0.60}\)As and compare them.
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Kalt, H., Klingshirn, C.F. (2019). Low-Dimensional Semiconductor Structures. In: Semiconductor Optics 1. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-24152-0_17
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DOI: https://doi.org/10.1007/978-3-030-24152-0_17
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