Abstract
The long-standing issue of critical current density (J c) degradation with thickness in Second-Generation High-Temperature Superconductors (2G-HTS) and progress in understanding and overcoming this hurdle is reviewed. Since the early days of 2G-HTS development, it has been realized that J c strongly decreases with film thickness, thereby preventing arbitrary increase in conductor critical current, I c, by growing thicker films, irrespective of the deposition technique used. In addition, saturation in I c at thickness of approximately 1.5–2 μm has been reported, implying a formation of “dead layer” that carries no current above this thickness. The phenomenon has strong implications in limiting the development of 2G-HTS both in terms of improvement in performance and decreasing cost in terms of cost/performance ratio.
The chapter reviews the progress in overcoming the thickness dependence issue starting from earliest reports on this phenomenon, and ending with recent very promising results demonstrating growth of thick films (>4 μm) with no texture degradation and record high critical current levels, both at self-field, 77 K, and under applied magnetic fields at various temperatures of interest. Different approaches, from physical models of degradation in I c due to increasing self-field with thickness, material deposition issues such as increase in fraction of a-axis or randomly oriented grains and decreased J c-thickness dependence in films grown with Artificial Pinning Centers (APC) are addressed. Finally, recent breakthroughs, such as reaching 1400–1500 A/cm-width at 77 K, self-field, and achieving Engineering Current Density (J e) of over 5 kA/mm2 at 4.2 K, 14 T, five times higher than Nb3Sn, in thick 2G-HTS films are reviewed.
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Majkic, G. (2020). Progress in Thick Film 2G-HTS Development. In: Mele, P., et al. Superconductivity. Springer, Cham. https://doi.org/10.1007/978-3-030-23303-7_4
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