Abstract
This paper studies the impact of the aging on power GaN transistors in switching conditions. The devices under test are commercial discrete enhancement mode gallium-nitride HEMT. We present a power cycling test platform that controls the switching conditions such as frequency, duty cycle, and gate voltage; as well as drain current and drain voltage. We have measured specific parameters before and after the power cycling in order to detect indicators for each drift effect. We measure not only the electrical parameters given by datasheet, but also the traps causing Dynamic On-State Resistance, an specific drift effect of this technology which compromises high frequency efficiency in switching power converters.
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References
Lutz, J., Franke, J.: Reliability and reliability investigation of wide-bandgap power devices, invited paper ESREF (2018)
Fu, J.Z., Fouquet, F., et al.: Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. ESREF (2018)
Meneghini, M., et al.: Power GaN Devices, pp. 299–300. Springer, Berlin (2017)
Li, K., et al.: GaN-HEMT RDSON characterisation and modelling. COMPEL IEEE (2016)
EPC Corporation: EPC2019 Enhancement Mode Power Transistor, datasheet, Sep. 2015
Lidow, A., et al.: eGaN FET drivers and layout considerations. EPC Corporation (2016)
Song, S., et al.: Failure mechanism analysis of a discrete 650 V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test. IEE (2017)
Meneghini, M., et al.: Reliability and failure analysis in power GaNHEMTs: an overview. IEEE, June 2017
Dobresc, L., Petrov, M., et al.: Threshold voltage extraction methods for MOS transistors. CAS 2000 Proceedings IEEE, Oct 2000
Meneghini, M., et al.: Buffer traps in Fe-Doped AlGaN/GaN HEMTs. IEEE Dec 2014
Saadaoui, S., Ben Salem, M.M., Gassoumi, M., Maaref, H., Gaquière, C.: J. Appl. Phys. 110 (2011), 013701
Acknowledgments
This work is conducted in the frame of the IRT Saint-Exupery Robustness Electronic project sponsored by Airbus Operations, Airbus Group Innovations, Continental Automotive France, Hirex Engineering, Nexio, Safran Electrical & Power, Thales Alenia Space France, Thales Avionics and the French National Agency for Research (ANR).
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González-Sentís, M.A., Tounsi, P., Bensoussan, A., Dufour, A. (2020). Drift Effects and Trap Analysis of Power-GaN-HEMT Under Switching Power Cycling. In: Bouhlel, M., Rovetta, S. (eds) Proceedings of the 8th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT’18), Vol.2. SETIT 2018. Smart Innovation, Systems and Technologies, vol 147. Springer, Cham. https://doi.org/10.1007/978-3-030-21009-0_17
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DOI: https://doi.org/10.1007/978-3-030-21009-0_17
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