Abstract
GaAs is a widely used III-V semiconductor compound in microelectronics. Since the 90’s, a growing interest is observed for its larger integration in electronics industry (micro and nano electronics) and solar in cells. Therefore, new characterization needs are emerging to address this kind of applications. In particular, specific features such as the thermal properties are of great interest. In this framework, the thermal conductivity of GaAs substrate has to be studied. In this paper, we present the results obtained when characterizing a 350 µm thick GaAs substrate by the so-called 3-omega method. This latter has been widely exploited to determine the thermal conductivity of a large range of materials. It makes use of a thin metal strip, deposited on the sample under test, which serves as both a heating element ant a sensor. The results obtained experimentally are compared to those issued from an analytical solution (Cahill solution).
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Torres, P., Torelló, A., Bafaluy, J., Camacho, J., Cartoix, X.: First principles kinetic-collective thermal conductivity of semiconductors. Phys. Rev. B 95, 165407 (2017)
Hamaizia, Z., Sengouga, N., Missous, M., Yagoub, M.C.E.: L-band low noise amplifier using a novel InGaAs/InAlAs/InP device. In: 6th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, IEEE Xplore, pp. 258– 262. Sousse, Tunisia (2012)
Vasilea, B.S., BenDalyb, A., Craciunc, D., Alexandroud, I., Lazard, S., Lemaîtree, A., Maarefb, M.A., Iacomif, F., Craciunc, V.: Structural and physical properties of InAlAs quantum dots grown on GaAs. Phys. B: Condens. Matter 535, 262–267 (2018)
Tritt, T.M., Weston, D., Measurement techniques and considerations for determining thermal conductivity of bulk materials. In: Tritt, T.M. (ed.) Thermal Conductivity Theory, Properties, and Applications, pp. 187–203. Kluwer Academic/Plenum Publishers, New York (2004)
Cahill, D.G.: Thermal conductivity measurement from 30 to 750 K: the 3-omega method. Rev. Sci. Instrum. 61, 802–808 (1990)
Moridi, A., Zhang, L., Liu, W., Duvall, S., Brawley, A., Jiang, Z., Yang, S., Li, C.: Characterisation of high thermal conductivity thin-film substrate systems and their interface thermal resistance. Surf. Coat.S Technol. 334, 233–242 (2018)
Cahill, D.G., Lee, S.-M., Selinder, T.: Thermal conductivity of k-Al2O3 wear-resistant coatings. J. Appl. Phys. 83, 5783–5786 (1998)
Qiu, L., Zou, H., Tang, D., Wen, D., Feng, Y., Zhang, X.: Inhomogeneity in pore size appreciably lowering thermal conductivity for porous thermal insulators. Appl. Therm. Eng. 130, 1004–1011 (2018)
Hu, X., Jack, Padilla Antonio A., Xu Jun, Fisher Timothy, S., Goodson Kenneth, E.: 3-Omega Measurements of Vertically Oriented Carbon Nanotubes on Silicon. J. Heat Transf. 128, 1109–1113 (2006)
Jaber, W., Chapuis, P.O.: Non-idealities in the 3ω method for thermal characterization in low-and high frequency. Am. Inst. Phys. Adv. 8, 045111 (2018)
Borca-Tasciuc, T., Achimov, D., Liu, W.L., Chen, G., Ren, H.-W., Lin, C.-H., Pei, S.S.: Data reduction in 3ω method for thin-film thermal conductivity determination. Rev. Sci. Instrum. 72(4), 2139–2147 (2001)
Tgra, L.G., Shiomi, J., Esferjani, K., Chen, G.: Gallium Aresenide thermal conductivity and optical phonon relaxation times from first-principle calculations. Eur. Lett. 101, 16001 (2013)
Inyushkin, A.V., Taldenkov, A.N., Yakubovsky, A.Y., Markov, A.V., Moreno-Garsia, L., Sharonov, B.N.: Thermal conductivity of isotopically enriched GaAs crystal. Semicond. Sci. Technol. 18, 685–688 (2003)
Al-Khudary, N., Cresson, P.Y., Wei, W., Happy, H.G., Lasri, T.: Inkjet printing technology for polymer thermal conductivity measurement by the three omega method. Polym. Test. 40, 187–195 (2014)
El-Gibari, M., Belkerk, B., Lupy, C., Scudeller, Y., Landesman, J.P.: Caractérisation Thermique d’Emetteurs Electro-optiques: des matériaux aux assemblages. Journée Thématique Caractérisation Thermophysique et Applications en Microélectronique, Orléans (2011)
SZE S.M.: Semi-conductor devices physics and technology, 2nd edn. Wiley. Appendix G, 538 (1985)
Inyushkin, A.V., Taldenkov, A.N., Yakubovsky, A.Y., Markov, A.V., Moreno-Garsia, L., Sharonov, B.N.: Thermal conductivity of isotopically enriched GaAs crystal. Semicond. Sci. Technol. 18, 685–688 (2003)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Switzerland AG
About this paper
Cite this paper
Guermoudi, A.A., Cresson, P.Y., Ouldabbes, A., Lasri, T. (2020). Simulation and Experimental Study of GaAs Substrate Thermal Conductivity Using 3-Omega Method. In: Bouhlel, M., Rovetta, S. (eds) Proceedings of the 8th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT’18), Vol.2. SETIT 2018. Smart Innovation, Systems and Technologies, vol 147. Springer, Cham. https://doi.org/10.1007/978-3-030-21009-0_16
Download citation
DOI: https://doi.org/10.1007/978-3-030-21009-0_16
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-21008-3
Online ISBN: 978-3-030-21009-0
eBook Packages: Intelligent Technologies and RoboticsIntelligent Technologies and Robotics (R0)