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Linearity Aspects of High Power Amplification in GaN Transistors

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High-Frequency GaN Electronic Devices

Abstract

Linearity (and its absence) is a major design constraint in practical high-frequency communication circuits, impacting both transmitter and receiver circuits. This chapter will introduce the general features of non-linearity and how it impacts circuit design, then dive into the origins of non-linearity in GaN devices specifically, detailing how it is modelled in the literature, and conclude with a discussion of designs at both the device level and circuit level which can help linearize systems based on GaN PAs.

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Authors and Affiliations

  1. Cornell University, Ithaca, NY, USA

    Samuel James Bader & Alyosha Molnar

  2. Teledyne Scientific & Imaging, Thousand Oaks, CA, USA

    Keisuke Shinohara

Authors
  1. Samuel James Bader
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  2. Keisuke Shinohara
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  3. Alyosha Molnar
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Correspondence to Keisuke Shinohara .

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Editors and Affiliations

  1. University of Notre Dame, Notre Dame, IN, USA

    Patrick Fay

  2. Cornell University, Ithaca, NY, USA

    Debdeep Jena

  3. Office of Naval Research, Arlington, VA, USA

    Paul Maki

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Bader, S.J., Shinohara, K., Molnar, A. (2020). Linearity Aspects of High Power Amplification in GaN Transistors. In: Fay, P., Jena, D., Maki, P. (eds) High-Frequency GaN Electronic Devices. Springer, Cham. https://doi.org/10.1007/978-3-030-20208-8_4

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  • DOI: https://doi.org/10.1007/978-3-030-20208-8_4

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