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Circadian Rhythms for Future Resilient Electronic Systems pp 3–14Cite as

Introduction to Wearout

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Abstract

Over the last decade, CMOS wearout emerged as one of the most critical threats to circuit performance and system reliability. Among recognized wearout mechanisms, bias temperature instability (BTI) and electromigration (EM) appear as two dominant effects that affect transistors and interconnect, respectively. Conventional flat guardband or dynamic margin design approaches address these effects by tolerating them, but they can be both costly and insufficient. Techniques that can take advantage of recovery of the phenomena can be more economic and effective. In this chapter, we present a taxonomy of state-of-the-art BTI and EM mitigation techniques that were developed across the system hierarchy, followed by the introduction of the concept of accelerated active self-healing that will be addressed throughout the rest of the book.

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Notes

  1. 1.

    In this book, the terms “aging” and “wearout” are used interchangeably. Circuit aging/wearout refers to wearout effects at both transistor level and interconnect level. Transistor aging/wearout mainly refers to BTI effect or other effects that affect CMOS transistors.

  2. 2.

    In this book, terms “accelerated active self-healing” and “accelerated and active recovery” are used interchangeably.

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Authors and Affiliations

  1. University of Virginia, Charlottesville, VA, USA

    Xinfei Guo & Mircea R. Stan

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Guo, X., Stan, M.R. (2020). Introduction to Wearout. In: Circadian Rhythms for Future Resilient Electronic Systems. Springer, Cham. https://doi.org/10.1007/978-3-030-20051-0_1

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  • DOI: https://doi.org/10.1007/978-3-030-20051-0_1

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