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Electric Field Thermopower Modulation of 2D Electron Systems

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Thermoelectric Thin Films

Abstract

Thermopower (≡Seebeck coefficient, S) is known as not only an important physical property for thermoelectric energy conversion but also useful to understand electronic structures of materials since |S| strongly depends on the energy derivative of the electronic density of states (DOS) at around the Fermi energy. In case of bulk system, the slope of log n 3D vs. S relation should be –ln 10∙k B∙e −1 (≡ −198 μV K−1 decade−1) since parabolic-shaped E–k relation at around the conduction band minimum is generally observed. Furthermore, an enhanced S can be observed by modifying the DOS in low-dimensional structures such as two-dimensional electron system (2DES). The electric field thermopower modulation measurement is a powerful technique to clarify the effective thickness and the electronic structure of the 2DES. Here I review the electric field modulated S of 2DESs confined in the several transistors including SrTiO3, BaSnO3, and AlGaN/GaN heterointerfaces.

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Author information

Authors and Affiliations

  1. Research Institute for Electronic Science, Hokkaido University, Sapporo, Japan

    Hiromichi Ohta

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  1. Hiromichi Ohta
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Correspondence to Hiromichi Ohta .

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Editors and Affiliations

  1. SIT Research Laboratories, Omiya campus, Shibaura Institute of Technology (Tokyo), Tokyo, Japan

    Paolo Mele

  2. University of Milano-Bicocca, Milano, Italy

    Dario Narducci

  3. AIST, Tsukuba, Japan

    Michihiro Ohta

  4. JNCASR, Bangalore, India

    Kaniskha Biswas

  5. IREC, Sant Adrià de Besòs, Spain

    Juan Morante

  6. Department of Mechanical and Control Engineering, Kyushu Institute of Technology, Kitakyushu, Japan

    Shrikant Saini

  7. Japan Advanced Chemicals, Atsugi, Japan

    Tamio Endo

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Ohta, H. (2019). Electric Field Thermopower Modulation of 2D Electron Systems. In: Mele, P., et al. Thermoelectric Thin Films. Springer, Cham. https://doi.org/10.1007/978-3-030-20043-5_5

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