Abstract
In the early 1960s, the first semiconductor detector was used in the electronics industries. After the first implementation of planar technology in 1980 by J. Kemmer [1–3], semiconductors were quickly understood to give detectors of extraordinarily high performance in High Energy Physics (HEP) experiments. Semiconductor detectors have been used in modern HEP experiments in the form of pixel detectors, strip/microstrip detectors. They are popular due to their unmatched energy and spatial resolution and excellent response time. These detectors are manufactured mainly of silicon (Si), traditionally on high-resistivity single crystal float-zone material. Recent progress in micro technology now allows reliable large-scale production of detectors of sophisticated designs at acceptable cost.
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Srivastava, A.K. (2019). Physics and Technology of Si Detectors. In: Si Detectors and Characterization for HEP and Photon Science Experiment. Springer, Cham. https://doi.org/10.1007/978-3-030-19531-1_2
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DOI: https://doi.org/10.1007/978-3-030-19531-1_2
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