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The Atomic Force Microscopy for Nanoelectronics

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Electrical Atomic Force Microscopy for Nanoelectronics

Part of the book series: NanoScience and Technology ((NANO))

Abstract

The invention of scanning tunneling microscopy (STM), rapidly followed by atomic force microscopy (AFM), occurred at the time when extensive research on sub-µm metal oxide field-effect transistors (MOSFET) was beginning. Apparently uncorrelated, these events have positively influenced one another. In fact, ultra-scaled semiconductor devices required nanometer control of the surface quality, and the newborn microscopy techniques provided unprecedented sensing capability at the atomic scale. This alliance opened new horizons for materials characterization and continues to this day, with AFM representing one of the most popular analysis techniques in nanoelectronics. This book discusses how the introduction of new devices benefited from AFM, while driving the analysis and sensing capabilities in novel directions. Here, the goal is to introduce the major electrical AFM methods, going through the journey that has seen our life changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

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    Umberto Celano

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Celano, U. (2019). The Atomic Force Microscopy for Nanoelectronics. In: Celano, U. (eds) Electrical Atomic Force Microscopy for Nanoelectronics. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-030-15612-1_1

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