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Multi-chip Modules and Multi-chip Packaging

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Part of the book series: Smart Sensors, Measurement and Instrumentation ((SSMI,volume 34))

Abstract

In the previous chapter, the concept of the SoC, where all system circuitry is placed on one die, and that die is packaged, was discussed. It was stated that SoC packaging is often favored above other packaging approaches because of the small form factor that is relatively simply achieved. Numerous reasons, on the other hand, can be listed why one would like to use multiple dice (Some sources also use “dies” and “die” as plural forms of cut wafer die.) in one package. For example, the dice could be fabricated in different technologies (as discussed in Chap. 1) and packaging of these dice in a single package would still be less expensive than packaging the different dice separately. Interconnects inside such packages are also shorter, which is a clear benefit for RF. Dice fabricated in the same or similar technologies (e.g. both CMOS) but packaged in the same enclosure could also offer advantages—for example, one die could hold proprietary circuitry sourced from a third party and the second die could have custom-designed circuitry. In the third example, one could consider multiple identical dice that are stacked in three dimensions and packaged together. Arranging dice in a 3D configuration saves a lot of horizontal space—e.g. stacking four ICs on top of one another could theoretically cut both the width and length of the package by half. This solution may be beneficial for memory circuitry, for example, where a large number of transistors need to be placed in limited space. Stacking does not necessarily require the dice to be identical, but having non-identical dice does complicate the design methodology. However, the approach of 3D stacking of different dice is also often seen in the literature.

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Notes

  1. 1.

    Some sources also use “dies” and “die” as plural forms of cut wafer die.

References

  1. Chen J, Henrie M, Mar MF, Nizic M. Mixed-signal methodology guide. San Jose: Cadence Design Systems; 2012.

    Google Scholar 

  2. Tummala RR, Swaminathan M. System-on-package: miniaturization of the entire system. 1st ed. New York: McGraw-Hill Professional; 2008.

    Google Scholar 

  3. Allan R. Is 3D IC packaging read for prime time? Electron Des. 2012;60(1).

    Google Scholar 

  4. Panth S, Samadi K, Du Y, Lim SK. Placement-driven partitioning for congestion mitigation in monolithic 3D IC designs. IEEE Trans Comput Aided Des Integr Circuits Syst. 2015;34(4):540–53.

    Article  Google Scholar 

  5. Shi Y, Shang Y, Yu H, Elassaad S. IC-package-system integration design. In: Tong HM, Lai YS, Wong CP, editors. Advanced flip chip packaging. Cham: Springer; 2013. p. 341–412.

    Google Scholar 

  6. Lai MF, Li SW, Shih JY, Chen KN. Wafer-level three-dimensional integrated circuits (3D IC). Microelectron Eng. 2011;88(11):3282–6.

    Article  Google Scholar 

  7. Zhang L, Liu ZQ, Chen SW, Wang YD, Long WM, Guo YH, Wang SQ, Ye G, Wen-Yi L. Materials, processing and reliability of low temperature bonding in 3D chip stacking. J Alloy Compd. 2018;2018:980–95.

    Article  Google Scholar 

  8. Frantz F, Labrak L, O’Connor I. 3D IC floorplanning: automating optimization settings and exploring new thermal-aware management techniques. Microelectron J. 2012;43(6):423–32.

    Article  Google Scholar 

  9. Wang Q, Chen Z, Jiang J, Guo Z, Mao Z. Dynamic data split: A crosstalk suppression scheme in TSV-based 3D IC. Integration, VLSI J. 2017;59(1):23–30.

    Article  Google Scholar 

  10. Adamshick S, Coolbaugh D, Liehr M. Experimental characterization of coaxial through silicon vias for 3D integration. Microelectron J. 2015;46(5):377–82.

    Article  Google Scholar 

  11. Lau JH. Critical issues of TSV and 3D IC integration. J Microelectron Electron Packag. 2010;7(1):35–43.

    Article  Google Scholar 

  12. Doug CH, Chiou WC, Tung CH. Thin die fabrication and applications to wafer level system integration. In: Lu D, Wong CP, editors. Materials for advanced packaging. Cham: Springer Nature; 2017. p. 237–282.

    Google Scholar 

  13. Cheng HC, Huang TC, Hwang PW, Chen WH. Heat dissipation assessment of through silicon via (TSV)-based 3D IC packaging for CMOS image sensing. Microelectron Reliab. 2016;59:84–94.

    Article  Google Scholar 

  14. Tu KN, Hsiao HY, Chen C. Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy. Microelectron Reliab. 2013;53(1):2–6.

    Article  Google Scholar 

  15. Kandlikar SG, Ganguly A. Fundamentals of heat dissipation in 3D IC packaging. In: Li Y, Goyal D, editors. 3D microelectronic packaging. Cham: Springer. p. 245–260.

    Google Scholar 

  16. Kearney D, Hilt T, Pham P. A liquid cooling solution for temperature redistribution in 3D IC architectures. Microelectron J. 2012;43(9):602–10.

    Article  Google Scholar 

  17. Hou L, Fu J, Wang J, Gong N. A novel thermal-aware structure of TSV cluster in 3D IC. Microelectron Eng. 2016;153:110–6.

    Article  Google Scholar 

  18. Hou L, Ye T, Luo Q, Fu J, Wang J. A method to alleviate hot spot problem in 3D IC. Microelectron Eng. 2018;190:19–27.

    Article  Google Scholar 

  19. Lau JH, Yue TG. Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP). Microelectron Reliab. 2012;52(11):2660–9.

    Article  Google Scholar 

  20. Pan Y, Li F, He H, Li J, Zhu W. Effects of dimension parameters and defect on TSV thermal behavior for 3D IC packaging. Microelectron Reliab. 2017;70:97–102.

    Article  Google Scholar 

  21. Kato F, Nakagawa H, Aoyagi M. A novel method of hotspot temperature reduction for a 3D stacked CMOS IC chip device fabricated on an ultrathin substrate. J Micromech Microeng. 2013;23:1–7.

    Article  Google Scholar 

  22. Jung M, Mitra J, Pan DZ, Lim SK. TSV stress-aware full-chip mechanical reliability analysis and optimization for 3D IC. Commun ACM. 2014;57(1):107–15.

    Article  Google Scholar 

  23. Tu KN. Reliability challenges in 3D IC packaging technology. Microelectron Reliab. 2011;51(3):517–23.

    Article  Google Scholar 

  24. Wang Y, Liu Y, Li M, Tu KN, Xu L. Interconnect quality and reliability of 3D packaging. In: Yan L, Goyal D, editors. 3D Microelectronic packaging. Cham: Springer; 2017. p. 375–420.

    Google Scholar 

  25. Kung HK, Ho SH. Effect of minute bends and/or kinks of wire bond profile on sag deflection for 3-D and multichip module semiconductor packaging. IEEE Trans Semicond Manuf. 2016;29(2):168–175.

    Google Scholar 

  26. Vandevelde B, Ivankovic A, Debecker B, Lofrano M, Vanstreels K, Guo W, Cherman V, Gonzalez M, Van der Plas G, De Wolf I, et al. Chip-package interaction in 3D stacked IC packages using finite element. Microelectron Reliab. 2014;54(6–7):1200–1205.

    Google Scholar 

  27. Charles HK. Advanced wire bonding technology: materials, methods, and testing. In: Lu D, Wong CP, editors. Materials for advanced packaging. Boston: Springer; 2009. p. 113–179.

    Google Scholar 

  28. Mak WK, Lin YC, Chu C, Wang TC. Pad assignment for die-stacking system-in-package design. IEEE Trans Comput Aided Des Integr Circuits Syst. 2012;31(11):1711–22.

    Article  Google Scholar 

  29. Krishnan S, Kim YG, Mohammed I. Thermal performance characteristics of folded stacked packages. In: Eighteenth annual IEEE semiconductor thermal measurement and management symposium; 2002; San Jose, CA. p. 42–9.

    Google Scholar 

  30. Lacrevaz T, Bermond C, El Bouayadi O, Houzet G, Artillan P, Lamy Y, Dieng K, Fléchet B. Electrical broadband characterization method of dielectric molding in 3-D IC and result. IEEE Trans Compon Packag Manuf Technol. 2014;4(9):1515–22.

    Article  Google Scholar 

  31. Lau J, Tzeng P, Lee C, Zhan C, Li M, Cline J, Saito K, Hsin Y, Chang P, Chang Y, et al. Redistribution layers (RDLs) for 2.5 D/3D IC integration. J Microelectron Electron Packag. 2014;11(1):16–24.

    Google Scholar 

  32. El Amrani A, Demir K, Bouya M, Faqir M, Hadjoudja A, Ghogho M. Fabrication, assembly and testing of a glass interposer-based 3D systems in package. Microelectron Eng. 2016;165:6–10.

    Article  Google Scholar 

  33. Kumar P, Dutta I, Huang Z, Conway P. Materials and processing of TSV. In: Li Y, Goyal D, editors. 3D microelectronic packaging. Cham: Springer Nature; 2017. p. 47–69.

    Google Scholar 

  34. Qu S, Liu Y. Wafer-level chip-scale packagin. New York: Springer; 2016.

    Google Scholar 

  35. Lim J, Cho J, Jung DH, Kim JJ, Choi S, Kim DH, Lee M, Kim J. Modeling and analysis of TSV noise coupling effects on RF LC-VCO and shielding structures in 3D IC. IEEE Trans Electromagn Compat. 2018;60(6):1939–47.

    Article  Google Scholar 

  36. Ehsan MA, Zhou Z, Liu L, Yi Y. An analytical through silicon via (TSV) surface roughness model applied to a millimeter wave 3-D IC. IEEE Trans Electromagn Compat. 2015;57(4):815–26.

    Article  Google Scholar 

  37. Lau JH, Zhan CJ, Tzeng PJ, Lee CK, Dai MJ, Chien HC, Chao YL, Li W, Wu ST, Hung JF, Tain RM. Feasibility study of a 3D IC integration system-in-packaging (SiP) from a 300 mm multi-project wafer. J Microelectron Electron Packag. 2011;2011(8):171–178.

    Google Scholar 

  38. Attarzadeh H, Lim SK, Ytterdal T. Design and analysis of a stochastic flash analog-to-digital converter in 3D IC technology for integration with ultrasound transducer array. Microelectron J. 2016;48:39–49.

    Article  Google Scholar 

  39. Guibane B, Hamdi B, Salem BB, Mtibaa A. A novel efficient TSV built-in test for stacked 3D ICs. Turk J Electr Eng Comput Sci. 2018;26(4):1909–21.

    Article  Google Scholar 

  40. Taouil M, Hamdioui S, Beenakker K, Marinissen EJ. Test impact on the overall die-to-wafer 3D stacked IC cost. J Electron Test. 2012;28(1):15–25.

    Article  Google Scholar 

  41. Wang C, Zhou J, Weerasekera R, Zhao B, Liu X, Royannez P, Je M. BIST methodology, architecture and circuits for pre-bond TSV testing in 3D stacking IC systems. IEEE Trans Circuits Syst I Regul Pap. 2015;62(1):139–48.

    Article  Google Scholar 

  42. Mack W. 3-D system in package—How to cope with increasing challenges. Electron Device Fail Anal. 2012;14(3):4–11.

    Google Scholar 

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Correspondence to Mladen Božanić .

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Božanić, M., Sinha, S. (2019). Multi-chip Modules and Multi-chip Packaging . In: Systems-Level Packaging for Millimeter-Wave Transceivers. Smart Sensors, Measurement and Instrumentation, vol 34. Springer, Cham. https://doi.org/10.1007/978-3-030-14690-0_7

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  • DOI: https://doi.org/10.1007/978-3-030-14690-0_7

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