Effect of Erbium Addition on Optical and Electrical Properties of Polytetrafluoroethylene
Our aim focused on semiconductor materials based on polytetrafluoroethylene (PTFE) doped by various concentrations of Erbium element (Er). The materials have been characterized by X-ray diffraction, optical properties of materials have been studied by UV-visible spectroscopy and spectroscopy of Fourier transform infrared (FT-IR). Our results showed a change of direct cell parameters of samples and information on micro strain of samples. It has been found that the increase in the percentage absorbance of Erbium grafted on PTFE that resulted in the increasing the absorption coefficient α, electrical conductivity and gap energy.
KeywordsSemiconductor X-ray diffraction FTIR Optical properties Microstrain Electrical conductivity and gap energy
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