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Novel Thermoelectric Materials and Device Design Concepts pp 63–81Cite as

SnTe-Based Thermoelectrics

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Abstract

Semiconducting PbTe has historically led to majority of the advancements in thermoelectrics. The realized thermoelectric figure of merit, ZT, has shown to be one of the highest. However, the concern on toxicity of Pb hinders its large-scale terrestrial applications, which motivates numerous efforts recently to be put on advancing its alternative analogue SnTe. To be as thermoelectrically efficient as that of p-type PbTe, concepts for ZT enhancement in SnTe are focused on the reductions of concentration of charge carriers, valence band offset, and lattice thermal conductivity. The synergy of these strategies, including band structure and defect engineering, significantly increases ZT from 0.4 up to 1.8 for SnTe thermoelectrics. Importantly, many of these high ZT materials remain a nontoxic composition. In this chapter, compositional designs for optimizing concentration of charge carriers, band structure/defect engineering, and solubility manipulation are introduced correspondingly. The strategies discussed here lead not only to promote SnTe as a highly efficient and eco-friendly alternative for p-type PbTe but open similar possibilities for advancing other thermoelectrics as well.

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  1. School of Materials Science and Engineering, Tongji University, Shanghai, China

    Wen Li, Jing Tang, Xinyue Zhang & Yanzhong Pei

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Li, W., Tang, J., Zhang, X., Pei, Y. (2019). SnTe-Based Thermoelectrics. In: Skipidarov, S., Nikitin, M. (eds) Novel Thermoelectric Materials and Device Design Concepts. Springer, Cham. https://doi.org/10.1007/978-3-030-12057-3_4

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