Abstract
Phosphorus (P) is widely used as n-type dopant for silicon (Si) to form the emitter layer in wafer-based silicon solar cells . The main purpose of this work is to investigate the influence of P doping on the structural and mechanical properties of silicon . CASTEP program, which uses the density functional theory (DFT), with a plane-wave basis, is used to study the structural, electronic, and mechanical properties of undoped and P-doped Si (Si1−xPx for 0.0001 ≤ x ≤ 0.05). The density of states (DOS), band structure, elastic constants, bulk modulus \( \left( B \right) \), Young’s modulus (E), Shear modulus \( \left( G \right) \), and Poisson’s ratio (v) were all calculated. It is found that brittleness of Si increased by P doping .
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Ikhmayies, S., Çiftci, Y.Ö. (2019). The Influence of Phosphorus Dopant on the Structural and Mechanical Properties of Silicon. In: Wang, T., et al. Energy Technology 2019. The Minerals, Metals & Materials Series. Springer, Cham. https://doi.org/10.1007/978-3-030-06209-5_21
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