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Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

  • Abu Riduan Md FoisalEmail author
  • Toan Dinh
  • Philip Tanner
  • Hoang-Phuong Phan
  • Tuan-Khoa Nguyen
  • Alan Iacopi
  • Erik W. Streed
  • Dzung Viet Dao
Conference paper
Part of the Smart Innovation, Systems and Technologies book series (SIST, volume 130)

Abstract

This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 °C. The detector shows a good diode characteristic with a rectification ratio of 1.03 × 103 and a reverse leakage current of 7.2 × 10−6 A at 2 V in dark conditions. The responsivity of the device is found to be 5.4 × 10−2 A/W and 3.18 × 10−2 A/W at a reverse bias of 2 V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.

Keywords

3C-SiC/si heterojunction Responsivity UV-visible light Band diagram 

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Abu Riduan Md Foisal
    • 1
    Email author
  • Toan Dinh
    • 1
  • Philip Tanner
    • 1
  • Hoang-Phuong Phan
    • 1
  • Tuan-Khoa Nguyen
    • 1
  • Alan Iacopi
    • 1
  • Erik W. Streed
    • 2
    • 3
  • Dzung Viet Dao
    • 1
    • 4
  1. 1.Queensland Micro-Nanotechnology CentreGriffith UniversityBrisbaneAustralia
  2. 2.Centre for Quantum DynamicsGriffith UniversityBrisbaneAustralia
  3. 3.Institute of GlycomicsGriffith UniversitySouthport, Gold CoastAustralia
  4. 4.School of EngineeringGriffith UniversitySouthport, Gold CoastAustralia

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