Abstract
Semiconductors often contain dopants or impurities. Such species constitute extrinsic defects that can affect the electrical properties of the solid to the point of changing the dominant charge states of intrinsic defects. This chapter summarizes the literature regarding the structure, ionization levels, and diffusion of extrinsic defects. The literature for bulk solids is enormous for Si, and quite large for Ge as well as GaAs – which is not surprising given the extensive use of these materials in microelectronics. The literature is also significant for other III-V materials, TiO2, and a variety of other oxides taken as a group. Semiconductor surfaces also support extrinsic defects that typically exhibit behavior analogous to that in the bulk, but differing in details. This section treats Si, GaAs, and TiO2 surfaces that support defects derived from elements finding extensive use as intentional bulk dopants, or for which there otherwise exists a significant literature on ionization. The discussion focuses mostly on structure, as few ionization levels have been determined and diffusion is treated in Chap. 7. The literature is small compared to that for bulk defects, mostly because there exist fewer direct applications and techniques that reliably track charging behavior.
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References
Abe E, Sato K, Matsukura F et al. (2004) J Supercond 17: 349–52
Adam LS, Law ME, Szpala S et al. (2001) Appl Phys Lett 79: 623–5
Adey J, Jones R, Palmer DW et al. (2005) Phys Rev B: Condens Matter 71: 165211
Agarwal A, Pelaz L, Vuong HH (Eds.) (2000) Silicon Front-End Processing – Physics & Technology of Dopant-Defect Interactions II., Warrendale, PA, Materials Research Society
Alfieri G, Monakhov EV, Avset BS et al. (2003) Phys Rev B: Condens Matter 68: 233202–1
Alippi P, Colombo L, Ruggerone P (2001a) Comput Mater Sci 22: 44–8
Alippi P, La Magna A, Scalese S et al. (2004) Phys Rev B: Condens Matter 69: 085213
Alippi P, Colombo L, Ruggerone P et al. (2001b) Phys Rev B: Condens Matter 64: 075207
Andersson PO, Kollberg EL, Jelenski A (1974) J Phys C: Solid State Phys 7: 1868–80
Arbiol J, Cerda J, Dezanneau G et al. (2002) J Appl Phys 92: 853–61
Asahi R, Morikawa T, Ohwaki T et al. (2001) Science 293: 269–271
Ashwin MJ, Newman RC, Muraki K (1997) J Appl Phys 82: 137–41
Auret FD, Peaker AR, Markevich VP et al. (2006) Physica B 376–377: 73–76
Bains SK, Banbury PC (1985) J Phys C: Solid State Phys 18: L109–L116
Ball RGJ, Grimes RW (1990) J Chem Soc Faraday Trans 86: 1257–1261
Ballo P, Harmatha L (2003) Phys Rev B: Condens Matter 68: 153201
Bally AR, Korobeinikova EN, Schmid PE et al. (1998) J Phys D: Appl Phys 31: 1149–1154
Barnes TM, Olson K, Wolden CA (2005) Appl Phys Lett 86: 112112
Batzill M, Morales EH, Diebold U (2006) Phys Rev Lett 96: 026103
Batzill M, Katsiev K, Gaspar DJ et al. (2002) Phys Rev B: Condens Matter 66: 235401
Batzill M, Hebenstreit ELD, Hebenstreit W et al. (2003) Chem Phys Lett 367: 319–323
Baumard JF, Tani E (1977) J Chem Phys 67: 857–860
Baur J, Kaufmann U, Kunzer M et al. (1995) Mater Sci Forum 196–201: 55–60
Bech Nielsen B, Johannesen P, Stallinga P et al. (1997) Phys Rev Lett 79: 1507–1510
Berger T, Sterrer M, Diwald O et al. (2005) J Phys Chem B 109: 6061–8
Bergman P, Gao Y, Monemar B et al. (1987) J Appl Phys 61: 4589–92
Bernardini F, Fiorentini V, Bosin A (1997) Appl Phys Lett 70: 2990–2
Blondeel A, Clauws P (1999) J Appl Phys 86: 940–945
Boguslawski P, Bernholc J (1997) Phys Rev B: Condens Matter 56: 9496–505
Bollmann J, Leisegang T, Meyer DC et al. (2006) Physica B 376–377: 57–60
Bonde Nielsen K, Dobaczewski L, Sogard S et al. (2002) Phys Rev B: Condens Matter 65: 075205
Bonde Nielsen K, Nielsen BB, Hansen J et al. (1999) Phys Rev B: Condens Matter 60: 1716–28
Bracht H (2000) MRS Bull 25: 22–7
Bracht H (2004) Mater Sci Semicond Process 7: 113–124
Bracht H, Brotzmann S (2005) Phys Rev B: Condens Matter 71: 115216
Brower KL (1980) Phys Rev Lett 44: 1627–1629
Budde M, Bech Nielsen B, Leary P et al. (1998) Phys Rev B: Condens Matter 57: 4397
Bunea MM, Dunham ST (2000) Phys Rev B: Condens Matter 61: 2397–400
Burns A, Hayes G, Li W et al. (2004) Mater Sci Eng, B B111: 150–5
Casali RA, Rucker H, Methfessel M (2001) Appl Phys Lett 78: 913–15
Catlow CRA (1977) Proceedings of the Royal Society of London, Series A (Mathematical and Physical Sciences) 353: 533–61
Chang J, Stott MJ (1996) Phys Rev B: Condens Matter 53: 13700–13704
Chang KJ, Chadi DJ (1989) Phys Rev Lett 62: 937–940
Chen SP, Yan M, Grimes RW et al. (1995) Defects in Ga, Cr, and In-doped CoO. In: American Ceramics Society Annual Conference, American Ceramics Society Annual Conference. Cincinnati, OH
Chen X, Glans PA, Xiaofeng Q et al. (2008) J Electron Spectrosc Relat Phenom 162: 67–73
Chen ZQ, Maekawa M, Kawasuso A et al. (2006) J Appl Phys 99: 093507
Chisholm JA, Bristowe PD (2001a) Modell Simul Mater Sci Eng 9: 249–58
Chisholm JA, Bristowe PD (2001b) Comp Mater Sci 22: 73–77
Choi W, Termin A, Hoffmann MR (1994) J Phys Chem 98: 13669–13679
Christensen JS, Radamson HH, Kuznetsov AY et al. (2003) Appl Phys Lett 82: 2254–6
Christian Petersen M, Lindberg CE, Nielsen KB et al. (2006) Mater Sci Semicond Process 9: 597–599
Chroneos A, Uberuaga BP, Grimes RW (2007a) J Appl Phys 102: 083707
Chroneos A, Grimes RW, Tsamis C (2007b) J Mater Sci – Mater Electron 18: 763–768
Chui CO, Gopalakrishnan K, Griffin PB et al. (2003) Appl Phys Lett 83: 3275–7
Clauws P, Huylebroeck G, Simoen E et al. (1989) Semicond Sci Technol 4: 910–914
Clauws P, Van Gheluwe J, Lauwaert J et al. (2007) Physica B 401–402: 188–91
Coffa S, Tavolo N, Frisina F et al. (1993) Nucl Instrum Methods Phys Res, Sect B 74: 47–52
Cohen RM (1997) Mater Sci Eng, R 20: 167–280
Collart EJH, Weemers K, Cowern NEB et al. (1998) Nucl Instrum Methods Phys Res, Sect B 139: 98–107
Continenza A, Profeta G, Picozzi S (2006) Phys Rev B: Condens Matter 73: 35212–1
Coomer BJ, Leary P, Budde M et al. (1999) Mater Sci Eng, B 58: 36–8
Coutinho J, Jones R, Briddon PR et al. (2000) Phys Rev B: Condens Matter 62: 10824–40
Coutinho J, Torres VJB, Jones R et al. (2003) J Phys: Condens Matter 15: S2809–S2814
Coutinho J, Janke C, Carvalho A et al. (2008) Diffusion and Defect Data Pt A Defect and Diffusion Forum 273–276: 93–98
Cowern NEB, van de Walle GFA, Gravesteijn DJ et al. (1991) Phys Rev Lett 67: 212–15
Cowern NEB, van de Walle GFA, Zalm PC et al. (1992) Phys Rev Lett 69: 116–19
Deak P, Schorder B, Annen A et al. (1993) Phys Rev B: Condens Matter 48: 1924–7
Deal MD, Stevenson DA (1986) J Appl Phys 59: 2398–407
Delugas P, Fiorentini V (2004) Phys Rev B: Condens Matter 69: 085203
Denteneer PJH, Van de Walle CG, Pantelides ST (1989) Phys Rev Lett 62: 1884–7
Di Valentin C, Pacchioni G, Selloni A (2004) Phys Rev B: Condens Matter 70: 85116–1
Di Valentin C, Pacchioni G, Selloni A et al. (2005) J Phys Chem B 109: 11414–19
Di Valentin C, Finazzi E, Pacchioni G et al. (2007) Chem Phys 339: 44–56
Diaz-Guerra C, Vincent J, Piqueras J et al. (2007) J Phys D: Appl Phys 40: 137–43
Dietl T, Ohno H, Matsukura F et al. (2000) Science 287: 1019–22
Ding R, Zhu H, Wang Y (2008) Mater Lett 62: 498–500
Ding Y, Han WQ, Lewis LH (2007) J Appl Phys 102: 123902
Dobaczewski L, Nielson KB, Zangenberg N et al. (2004) Phys Rev B: Condens Matter 69: 245207
Doerschel J (1994) Mater Sci Eng, B B28: 142–6
Domke C, Ebert P, Urban K (1998) Phys Rev B: Condens Matter 57: 4482–5
Domke C, Ebert P, Heinrich M et al. (1996) Phys Rev B: Condens Matter 54: 10288–91
Duffy R, Venezia VC, Loo J et al. (2005) Appl Phys Lett 86: 081917
Dunham ST, Wu CD (1995) J Appl Phys 78: 2362–6
Dzelme J, Ertsinsh I, Zapol B et al. (1999) J Alloys Compd 286: 254–7
Ebert P, Heinrich M, Simon M et al. (1996) Phys Rev B: Condens Matter 53: 4580
Edmonds KW, Boguslawski P, Wang KY et al. (2004) Phys Rev Lett 92: 037201
Emeline AV, Sheremetyeva NV, Khomchenko NV et al. (2007) J Phys Chem C 111: 11456–62
Engler N, Leipner HS, Scholz RF et al. (2001) Physica B 308–310: 742–4
Eror NG (1981) J Solid State Chem 38: 281–287
Estreicher SK (2004) Mater Sci Semicond Process 7: 101–11
Estreicher SK, West D, Sanati M (2005) Phys Rev B: Condens Matter 72: 121201
Estreicher SK, West D, Goss J et al. (2003) Phys Rev Lett 90: 035504
Evwaraye AO (1977) J Appl Phys 48: 734–738
Ewels CP, Jones R, Oberg S et al. (1996) Phys Rev Lett 77: 865–8
Fage-Pedersen J, Larsen AN, Mesli A (2000) Phys Rev B: Condens Matter 62: 10116–25
Fahey P, Barbuscia G, Moslehi M et al. (1985) Appl Phys Lett 46: 784–6
Fahey PM, Griffin PB, Plummer JD (1989) Rev Mod Phys 61: 289–84
Fair RB, Weber GR (1973) J Appl Phys 44: 273–9
Fair RB, Tsai JCC (1977) J Electrochem Soc 124: 1107–18
Feuser U, Vianden R, Pasquevich A (1990) Hyperfine Interact 60: 829–832
Forment S, Vanhellemont J, Clauws P et al. (2006) Mater Sci Semicond Process 9: 559–563
Frank RC, Thomas JE, Jr. (1960) J Phys Chem Solids 16: 144–151
Frederikse HPR (1961) J Appl Phys 32: 2211–2215
Friesel M, Sodervall U, Gust W (1995) J Appl Phys 78: 5351–5
Frigeri C, Weyher JL, Jimenez J et al. (1997) J Phys III 7: 2339–60
Fritsch J, Page JB, Schmidt KE et al. (1998) Phys Rev B: Condens Matter 57: 9745–56
Frymark I, Kowalski G (2005) J Phys D: Appl Phys 38: 160–3
Fukuoka N, Saito H (1982) Jpn J Appl Phys, Part 1 21: 930–5
Fukuoka N, Saito H, Kambe Y (1983) Jpn J Appl Phys 22: L353–L355
Fukuoka N, Atobe K, Honda M et al. (1991) Jpn J Appl Phys 30: 784–787
Ganchenkova MG, Kuznetsov AY, Nieminen RM (2004) Phys Rev B: Condens Matter 70: 115204–1
Garces NY, Wang L, Giles NC et al. (2003) J Electron Mater 32: 766–771
Gebauer J, Krause-Rehberg R, Domke C et al. (1997) Phys Rev Lett 78: 3334
Gesenhues U, Rentschler T (1999) J Solid State Chem 143: 210–18
Glassford KM, Chelikowsky JR (1993) Phys Rev B: Condens Matter 47: 12550–12553
Glinchuk KD, Miseliuk EG, Skopenko AI (1959) Instrum and Exper Tech: 245–248
Glunz SW, Schaeffer E, Rein S et al. (2003) Analysis of the defect activation Cz-silicon by temperature-dependent bias-induced degradation of solar cells. (IEEE, Osaka, Japan, 2003)
Goncharov LA, Emtsev VV, Mashovets TV et al. (1972) Sov Phys – Semicond 6: 369–70
Gorczyca I, Svane A, Christensen NE (1999) Phys Rev B: Condens Matter 60: 8147–57
Gosele U, Strunk H (1979) Appl Phys 20: 265–73
Gosele U, Morehead F (1981) J Appl Phys 52: 4617–19
Goss JP, Briddon PR (2005) Phys Rev B: Condens Matter 72: 115211
Goss JP, Hahn I, Jones R et al. (2003) Phys Rev B: Condens Matter 67: 45206–1
Gossmann HJ, Haynes TE, Stolk PA et al. (1997) Appl Phys Lett 71: 3862–4
Gotz W, Kern RS, Chen CH et al. (1999) Mater Sci Eng, B 59: 211–17
Graff K (2000) Metal Impurities in Silicon Device Fabrication, Berlin, Springer-Verlag
Grimes RW, Catlow CRA (1991) Philos Trans R Soc London, Ser A 335: 609–34
Grimes RW, Chen SP (2000) J Phys Chem Solids 61: 1263–1268
Gusakov V (2005) J Phys: Condens Matter 17: 2285–91
Gusakov V (2006) Mater Sci Semicond Process 9: 531–5
Gutkin AA, Averkiev NS, Reshchikov MA et al. (1995) Mater Sci Forum 196–201: 231–6
Gvishi M, Tannhauser DS (1972) J Phys Chem Solids 33: 893–911
Haddara YM, Folmer BT, Law ME et al. (2000) Appl Phys Lett 77: 1976–8
Hakala M, Puska MJ, Nieminen RM (2000) Phys Rev B: Condens Matter 61: 8155–8161
Haley BP, Gronbech-Jensen N (2005) Phys Rev B: Condens Matter 71: 195203
Hane M, Matsumoto H (1993) IEEE Trans Electron Devices 40: 1215–22
Hao S, Kantorovich L, Davies G (2004) Phys Rev B: Condens Matter 69: 155204
Harafuji K, Tsuchiya T, Kawamura K (2004) Jpn J Appl Phys, Part 1 43: 522–531
Harris RD, Newton JL, Watkins GD (1982) Phys Rev Lett 48: 1271–4
Harris RD, Newton JL, Watkins GD (1987) Phys Rev B: Condens Matter 36: 1094–104
Hautakangas S, Oila J, Alatalo M et al. (2003) Phys Rev Lett 90: 137402
Hebenstreit ELD, Hebenstreit W, Geisler H et al. (2002) Surf Sci 505: 336–348
Heinrich M, Budil M, Potzl HW (1991) J Appl Phys 69: 8133–8
Heiser T, Belayachi A, Schunck JP (2003) J Electrochem Soc 150: G831–G837
Hemstreet LA (1980) Phys Rev B: Condens Matter 22: 4590–9
Herring C, Johnson NM, Van de Walle CG (2001) Phys Rev B: Condens Matter 64: 125209
Hidalgo P, Mendez B, Dutta PS et al. (1998) Phys Rev B: Condens Matter 57: 6479–84
Hiller M, Lavrov EV, Weber J et al. (2005) Phys Rev B: Condens Matter 72: 153201
Hiramota K, Sano M, Sadamitsu S et al. (1989) Jpn J Appl Phys 28: L2109–L2111
Holbech JD, Nielsen BB, Jones R et al. (1993) Phys Rev Lett 71: 875–8
Holm B, Bonde Nielsen K, Bech Nielsen B (1991) Phys Rev Lett 66: 2360–3
Honda K, Ohsawa A, Toyokura N (1984) Appl Phys Lett 45: 270–271
Hoshino K, Peterson NL (1985) J Phys Chem Solids 46: 229–240
Hou T, Mao J, Pan H et al. (2006) J Nanopart Res 8: 293–297
Hourahine B, Jones R, Oberg S et al. (1998) Phys Rev B: Condens Matter 57: 12666–9
Huang JW, Bray KL, Kuech TF (1996) J Appl Phys 80: 6819–26
Hubik P, Kristofik J, Mares JJ et al. (2000) J Appl Phys 88: 6488–94
Hurle DTJ (1979) J Phys Chem Solids 40: 639–46
Hurle DTJ (1999) J Appl Phys 85: 6957–7022
Hwang CJ (1968) J Appl Phys 39: 4307–4312
Ip K, Overberg E, Heo YW et al. (2003) Appl Phys Lett 82: 385–387
Istratov AA, Weber ER (1998) Appl Phys A 66: 123–136
Istratov AA, Hieslmair H, Flink C et al. (1997) Appl Phys Lett 71: 2349–51
Istratov AA, Flink C, Hieslmair H et al. (2000) Mater Sci Eng, B B72: 99–104
Ito K, Baba I, Mizuno K et al. (1986) Mater Sci Forum 10–12: 1171–6
Itoh H, Murakami K, Takita K et al. (1987) J Appl Phys 61: 4862–4868
Jaffe JE, Droubay TC, Chambers SA (2005) J Appl Phys 97: 073908
Jager C, Jager W (2002) J Phys, Condens Matter 14: 12865–70
Janke C, Jones R, Oberg S et al. (2007) J Mater Sci – Mater Electron 18: 775–780
Jung MYL, Gunawan R, Braatz RD et al. (2004) AlChE J 50: 3248–3256
Jung MYL, Kwok CTM, Braatz RD et al. (2005) J Appl Phys 97: 063520
Kahen KB, Spence JP, Rajeswaran G (1991) J Appl Phys 70: 2464–6
Kahn JM, McMurray RE, Haller EE et al. (1987) Phys Rev B: Condens Matter 36: 8001
Kamiura Y, Hashimoto F, Nobusada T et al. (1984) J Appl Phys 56: 936–41
Kamon Y, Harima H, Yanase A et al. (2001) Physica B: Condensed Matter 308–310: 391–395
Karelina TA, Lavrishchev TT, Prikhod’ko GL et al. (1974) Inorg Mater 10: 194–6
Khoo GS, Ong CK (1987) J Phys C: Solid State Phys 20: 1385–1392
Knack S, Weber J, Lemke H (1999) Physica B 273–274: 387–90
Kohler U, Lubbers M, Mimkes J et al. (2001) Physica B 308–310: 126–129
Krause-Rehberg R, Leipner HS, Kupsch A et al. (1994) Phys Rev B: Condens Matter 49: 2385
Krause O, Ryssel H, Pichler P (2002) J Appl Phys 91: 5645–9
Krivov MA, Malisova EV, Mel’chenko EN et al. (1983) Sov Phys J 26: 1047–50
Kung JK, Spitzer WG (1974) J Appl Phys 45: 4477–4486
Kuznetsov GM, Barsukov AD, Pelevin OV et al. (1973a) Inorg Mater 9: 940–1
Kuznetsov GM, Pelevin OV, Barsukov AD et al. (1973b) Inorg Mater 9: 759–61
Ky NH, Reinhart FK (1998) J Appl Phys 83: 718–24
Laine T, Saarinen K, Mikinen J et al. (1996) Phys Rev B: Condens Matter 54: 11050–3
Latham CD, Alatalo M, Nieminen RM et al. (2005) Phys Rev B: Condens Matter 72: 235205
Lauwaert J, Hens S, Spiewak P et al. (2006) Physica B 376–377: 257–261
Lawrence GT (1978) J Nucl Mater 71: 195–218
Lee EC, Kim YS, Jin YG et al. (2001a) Phys Rev B: Condens Matter 64: 085120
Lee JK, Jung HS, Valdez JA et al. (2006a) Nucl Instrum Methods Phys Res, Sect B 250: 279–282
Lee KH, Stevenson DA, Deal MD (1990) J Appl Phys 68: 4008–4013
Lee WJ, Kang J, Chang KJ (2006b) Physica B 376–377: 699–702
Lee YJ, Nieminen RM (2001) Comput Phys Commun 142: 305–310
Lee YJ, von Boehm J, Pesola M et al. (2001b) Phys Rev Lett 86: 3060–3
Lei H, Leipner HS, Engler N et al. (2002) J Phys: Condens Matter 14: 7963–71
Leitch AWR, Alex V, Weber J (1998) Phys Rev Lett 81: 421–424
Lemke H (1994) in Semiconductor Silicon/1994 Huff Hr, Bergholz W & Sumino K (Eds.) Pennington, NJ, Electrochemical Society
Lévêque P, Pellegrino P, Hallén A et al. (2001) Nucl Instrum Methods Phys Res, Sect B 174: 297–303
Li W, Frenkel AI, Woicik JC et al. (2005a) Phys Rev B: Condens Matter 72: 155315
Li W, Wang Y, Lin H et al. (2003a) Appl Phys Lett 83: 4143–5
Li X, Yue PL, Kutal C (2003b) New J Chem 27: 1264–1269
Li X, Keyes B, Asher S et al. (2005b) Appl Phys Lett 86: 122107
Lindberg CE, Hansen JL, Bomholt P et al. (2005) Appl Phys Lett 87: 172103
Lindner R, Matzke H (1959) Z Naturforsch, A: Phys Sci 14a: 1074–1077
Lindstrom JL, Hallberg T, Hermansson J et al. (2001) Physica B 308–310: 284–9
Linsebigler AL, Lu G, Yates JT, Jr. (1995) Chem Rev 95: 735–758
Litvinov VV, Murin LI, Lindstrom JL et al. (2002) Semiconductors 36: 621–4
Liu XY, Windl W, Beardmore KM et al. (2003) Appl Phys Lett 82: 1839–41
Londos CA (1986) Phys Rev B: Condens Matter 34: 1310–1313
Longenbach KF, Xin S, Wang WI (1991) J Appl Phys 69: 3393–5
Luo G, Cheng CC, Huang CY et al. (2005) Electron Lett 41: 1354–1355
Luo X, Zhang SB, Wei SH (2004) Phys Rev B: Condens Matter 70: 033308
Luysberg M, Jager W, Urban K (1992) Mater Sci Eng, B 13: 137–151
Macdonald D, Geerligs LJ (2004) Appl Phys Lett 85: 4061–3
Mahadevan P, Zunger A (2004) Phys Rev B: Condens Matter 69: 115211
Makarenko LF (2001) Semicond Sci Technol 16: 619–630
Markevich VP, Peaker AR, Litvinov VV et al. (2004a) J Appl Phys 95: 4078–83
Markevich VP, Peaker AR, Markevich AV et al. (2006) Mater Sci Semicond Process 9: 613–18
Markevich VP, Hawkins ID, Peaker AR et al. (2002) Appl Phys Lett 81: 1821–3
Markevich VP, Murin LI, Lastovskii SB et al. (2005) J Phys: Condens Matter 17: 2331–40
Markevich VP, Litvinov VV, Dobaczewski L et al. (2003) Physica B 340–342: 844–8
Markevich VP, Hawkins ID, Peaker AR et al. (2004b) Phys Rev B: Condens Matter 70: 235213
Martin-Bragado I, Castrillo P, Jaraiz M et al. (2005) Phys Rev B: Condens Matter 72: 035202
Matsui T, Naito K (1986) J Nucl Mater 138: 19–26
Matsumoto Y, Murakami M, Hasegawa T et al. (2002) Appl Surf Sci 189: 344–8
Matzke H (1967) J Nucl Mater 23: 209–221
Matzke H (1987) J Chem Soc, Faraday Trans II 83: 1121–42
McQuaid SA, Newman RC, Tucker JH et al. (1991) Appl Phys Lett 58: 2933–5
Meek TT, von Roedern B, Clem PG et al. (2005) Mater Lett 59: 1085–8
Melis C, Lopez GM, Fiorentini V (2004) Appl Phys Lett 85: 4902–4904
Meyer BK, Alves H, Hofmann DM et al. (2004) Physica Status Solidi B 241: 231–60
Mimkes J, Sestakova V, Nassr KM et al. (1998) J Cryst Growth 187: 355–62
Mitha S, Aziz MJ, Schiferl D et al. (1996) Appl Phys Lett 69: 922–4
Mo Y, Bazant MZ, Kaxiras E (2004) Phys Rev B: Condens Matter 70: 205210
Momin AC, Mirza EB, Mathews MD (1991) J Nucl Mater 185: 308–10
Morehead FF, Lever RF (1986) Appl Phys Lett 48: 151–3
Morris D, Dou Y, Rebane J et al. (2000) Phys Rev B: Condens Matter 61: 13445–13457
Mrowec S, Grzesik Z (2003) J Phys Chem Solids 64: 1387–94
Mullin JB, Straughan BW, Driscoll CMH (1976) J Appl Phys 47: 2584–7
Mulvaney BJ, Richardson WB (1987) Appl Phys Lett 51: 1439–41
Munir ZA (1981) Int J Thermophys 2: 177–86
Murakami K, Kuribayashi H, Masuda K (1988) Phys Rev B: Condens Matter 38: 1589–92
Murin LI, Hallberg T, Markevich VP et al. (1998) Phys Rev Lett 80: 93
Na-Phattalung S, Smith MF, Kwiseon K et al. (2006) Phys Rev B: Condens Matter 73: 125205
Nagesh V, Farmer JW (1988) J Appl Phys 63: 1549–1553
Nakano Y, Morikawa T, Ohwaki T et al. (2007) Chem Phys 339: 20–6
Naranjo FB, Sanchez-Garcia MA, Pau JL et al. (2000) Study of the effects of Mg and Be co-doping in GaN layers. In: Phys. Status Solidi A (Germany) 180:97–102 (Wiley-VCH, Zeuthen, Germany, 2000)
Navarro H, Griffin J, Haller EE et al. (1987) Solid State Commun 64: 1297–1303
Nelson JS, Schultz PA, Wright AF (1998) Appl Phys Lett 73: 247–9
Neugebauer J, Van de Walle CG (1996a) Appl Phys Lett 68: 1829–31
Neugebauer J, Van de Walle CG (1996b) Appl Phys Lett 69: 503–5
Neugebauer J, Van de Walle C (1999) J Appl Phys 85: 3003–5
Newman R (2000) J Phys: Condens Matter 12: 335–65
Newman RC (1994) Semicond Sci Technol 9: 1749–62
Nichols CS, Van de Walle CG, Pantelides ST (1989) Phys Rev B: Condens Matter 40: 5484–96
Nickel NH (2006) Phys Rev B: Condens Matter 73: 195204
Nicoll S, Matzke H, Catlow CRA (1995) J Nucl Mater 226: 51–57
Nicols SP, Bracht H, Benamara M et al. (2001) Physica B 308–310: 854–7
Nishizawa J, Otsuka H, Yamakoshi S et al. (1974) Jpn J Appl Phys 13: 46–56
Nishizawa JI, Kurabayashi T (1999) Jpn J Appl Phys, Part 1 38: 6193–6
Northrup JE, Schabel MC, Karlsson CJ et al. (1991) Phys Rev B 44: 13799–13802
Northrup PA, Zhang SB (1993) Phys Rev B: Condens Matter 47: 6791–6794
Nyamhere C, Auret FD, Das AGM et al. (2007) Physica B 401–402: 499–502
Nylandsted Larsen A, Kyllesbech Larsen K, Andersen PE et al. (1993) J Appl Phys 73: 691–8
Oates AS, Newman RC (1986) Appl Phys Lett 49: 262–4
Ögüt S, Chelikowsky JR (2003) Phys Rev Lett 91: 235503
Oliva J (1984) Phys Rev B: Condens Matter 29: 6846–6858
Orlowski M (1988) Appl Phys Lett 53: 1323–5
Pankratov O, Huang H, Diaz de la Rubia T et al. (1997) Phys Rev B: Condens Matter 56: 13172–6
Pantelides ST, Sah CT (1974) Phys Rev B: Condens Matter 10: 638–658
Park CH, Zhang SB, Su-Huai W (2002) Phys Rev B: Condens Matter 66: 073202
Peaker AR, Markevich VP, Auret FD et al. (2005) J Phys: Condens Matter 17: 2293–302
Pearton SJ, Corbett JW, Shi TS (1987) Appl Phys A A43: 153–95
Pearton SJ, Williams JS, Short KT et al. (1989) J Appl Phys 65: 1089–1098
Pesola M, von Boehm J, Mattila T et al. (1999) Phys Rev B: Condens Matter 60: 11449–63
Petit T, Jomard G, Lemaignan C et al. (1999) J Nucl Mater 275: 119–23
Pickett WE, Cohen ML, Kittel C (1979) Phys Rev B: Condens Matter 20: 5050–5058
Pinho N, Coutinho J, Jones R et al. (2003) Physica B 340–342: 575–577
Pokotilo YM, Petukh AN, Litvinov VV (2003) Tech Phys Lett: 804–5
Ramamoorthy M, Briggs EL, Bernhole J (1998) Phys Rev Lett 81: 1642–5
Ramamoorthy M, Briggs EL, Bernholc J (1999) Phys Rev B 59: 4813–4821
Ramos LE, Furthmuller J, Leite JR et al. (2003) Phys Rev B: Condens Matter 68: 085209
Reboredo FA, Pantelides ST (1999) Phys Rev Lett 82: 1887–90
Reehal HS, Lesniak MP, Hughes AE (1996) J Phys D: Appl Phys 29: 934–938
Reiss JH, King RR, Mitchell KW (1996) Appl Phys Lett 68: 3302–3304
Reshchikov MA, Gutkin AA, Sedov VE (1995) Mater Sci Forum 196–201: 237–242
Richardson WB, Mulvaney BJ (1989) J Appl Phys 65: 2243–7
Riihimaki I, Virtanen A, Rinta-Anttila S et al. (2007) Appl Phys Lett 91: 091922
Rummukainen M, Makkonen I, Ranki V et al. (2005) Phys Rev Lett 94
Ryoken H, Sakaguchi I, Naoki O et al. (2005) J Mater Res 20: 2866–72
Saad A, Velichko OI, Shaman YP et al. (2006) Nucl Instrum Methods Phys Res, Sect B 253: 118–121
Saad AM, Velichko OI (2004) Mater Sci Semicond Process 7: 27–33
Sachse JU, Jost W, Weber J et al. (1997a) Appl Phys Lett 71: 1379–1381
Sachse JU, Sveinbjornsson EO, Jost W et al. (1997b) Appl Phys Lett 70: 1584–1586
Sadigh B, Lenosky TJ, Theiss SK et al. (1999) Phys Rev Lett 83: 4341–4
Sakthivel S, Kisch H (2003) Agnew Chem Int Ed 42: 4908–4911
Sardela MR, Jr., Ni WX, Ekberg JO et al. (1991) Surface segregation of boron during Si-MBE growth. In: Silicon Molecular Beam Epitaxy Symposium 109–14 (Mater. Res. Soc, Anaheim, CA, USA, 1991)
Sasaki J, Peterson NL, Hoshino K (1985) J Phys Chem Solids 46: 1267–83
Sassella A (2001) Appl Phys Lett 79: 4339–41
Satta A, Simoen E, Clarysse T et al. (2005) Appl Phys Lett 87: 172109
Sawada H, Kawakami K (2000) Phys Rev B: Condens Matter 62: 1851–8
Sayle DC, Catlow CRA, Perrin MA et al. (1995) J Phys Chem Solids 56: 799–805
Sberveglieri G, Comini E, Faglia G et al. (2000) Sens Actuators B 66: 139–141
Schirra P, Lopez GM, Fiorentini V (2004) Phys Rev B: Condens Matter 70: 245201
Schmackpfeffer R, Martin M (1993) Philos Mag A 68: 747–65
Scholz RF, Werner P, Gosele U et al. (2000) J Appl Phys 88: 7045–50
Senkader S, Wilshaw PR, Falster RJ (2001) J Appl Phys 89: 4803–4808
Sepega VF, Moreno M, Ramsteiner M et al. (2002) Phys Rev B: Condens Matter 66: 075217
Sestakova V, Stepanek B (1994) Mater Sci Eng, B B28: 138–41
Shah SI, Li W, Huang CP et al. (2002) PNAS 99: 6482–6486
Shamirzaev TS, Zhuravlev KS, Yakusheva NA et al. (1998) Phys Status Solidi B 210: 317–20
Sheppard LR, Bak T, Nowotny J (2006) J Phys Chem B 110: 22447–54
Sheppard LR, Zhou MF, Atanacio A et al. (2007) Adv Appl Ceram 106: 89–94
Sheu JK, Chi GC (2002) J Phys: Condens Matter 14: 657–702
Shi Q, Yang D, Jiang Z et al. (2006) J Mol Catal B: Enzym 43: 44–48
Smith MF, Setwong K, Tongpool R et al. (2007) Appl Phys Lett 91: 142107
Stallinga P, Johannesen P, Herstrom S et al. (1998) Phys Rev B: Condens Matter 58: 3842–52
Stampfl C, Van de Walle CG, Vogel D et al. (2000) Phys Rev B: Condens Matter 61: 7846–9
Stepanek B, Sestakova V, Sestak J (1999) ntype doping of GaSb crystals in ionized hydrogen atmosphere. In: Proc. SPIE – Int. Soc. Opt. Eng. (USA) 3724:121–4 (SPIE-Int. Soc. Opt. Eng, Zakopane, Poland, 1999)
Stoddard N, Pichler P, Duscher G et al. (2005) Phys Rev Lett 95: 025901
Stolwijk NA, Popping J (2003) Mater Sci Semicond Process 6: 315–18
Su JL, Nishi Y, Moll JL (1971) Solid-State Electronics 14: 262–4
Subbanna S, Tuttle G, Kroemer H (1988) J Electron Mater 17: 297–303
Sullivan JM, Erwin SC (2003) Phys Rev B: Condens Matter 67: 144415
Sunder K, Bracht H, Nicols SP et al. (2007) Phys Rev B: Condens Matter 75: 245210
Szuta M (1994) J Nucl Mater 210: 178–186
Tan TY, You HM, Gosele UM (1993) Appl Phys A A56: 249–58
Tarnow E (1991) Europhys Lett 16: 449–54
Teisseyre H, Gorczyca I, Christensen NE et al. (2005) J Appl Phys 97: 43704–1
Tian F, Liu C (2006) J Phys Chem B 110: 17866–71
Tkachev VD, Urenev VI (1971) Fizika i Tekhnika Poluprovodnikov 5: 1516–22
Trappmann T, Suergers C, Loehneysen Hv (1997) Europhys Lett 38: 177–82
Trappmann T, Surgers C, v. Lohneysen H (1999) Appl Phys A A68: 167–72
Troxell JR, Watkins GD (1980) Phys Rev B: Condens Matter 22: 921–31
Tsuji T, Matsui T, Abe M et al. (1989) J Nucl Mater 168: 151–156
Tuck B, Powell RG (1981) J Phys D 14: 1317–24
Tyler WW, Woodbury HH (1954) Phys Rev 96: 874–881
Uematsu M (1997) J Appl Phys 82: 2228–46
Uematsu M, Werner P, Schultz M et al. (1995) Appl Phys Lett 67: 2863–5
Ulyashin AG, Job R, Khorunzhii IA et al. (2001) Physica B 308–310: 185–9
Umeda T, Okonogi K, Ohyu K et al. (2006) Appl Phys Lett 88: 253504
Uppal S, Willoughby AFW, Bonar JM et al. (2001) J Appl Phys 90: 4293–5
Uppal S, Willoughby AFW, Bonar JM et al. (2004) J Appl Phys 96: 1376–80
Ural A, Griffin PB, Plummer JD (1999) Phys Rev Lett 83: 3454
Vainonen-Ahlgren E, Ahlgren T, Likonen J et al. (2000) Appl Phys Lett 77: 690–2
Van de Walle C (2000) Phys Rev Lett 85: 1012–1015
Van de Walle CG (2003) Phys Status Solidi B 235: 89–95
Van de Walle CG, Neugebauer J (2003) Nature 423: 626–8
Van de Walle CG, Limpijumnong S, Neugebauer J (2001) Phys Rev B: Condens Matter 63: 245205
Van de Walle CG, Denteneer PJH, Bar-Yam Y et al. (1989) Phys Rev B: Condens Matter 39: 10791–808
van Gisbergen SJCHM, Godlewski M, Gregorkiewicz T et al. (1991a) Appl Surf Sci 50: 273–6
van Gisbergen SJCHM, Godlewski M, Gregorkiewicz T et al. (1991b) Phys Rev B: Condens Matter 44: 3012–19
Vandenbossche E, Baccus B (1993) J Appl Phys 73: 7322–30
Venkatasubramanian R, Ghandhi SK, Kuech TF (1989) J Cryst Growth 97: 827–832
Vieland LJ, Kudman I (1963) J Phys Chem Solids 24: 437–441
Vogtenhuber D, Podloucky R, Redinger J et al. (2002) Phys Rev B: Condens Matter 65: 125411
Voronkov VV, Porrini M, Collareta P et al. (2001) J Appl Phys 89: 4289–93
Voyles PM, Chadi DJ, Citrin PH et al. (2003) Phys Rev Lett 91: 125505
Wang JS, C. K (1973) Phys Rev B: Condens Matter 7: 713–718
Wang XH, Li JG, Kamiyama H et al. (2005) J Am Chem Soc 127: 10982–10990
Wang Y, Hamers RJ (1995) J Vac Sci Technol A 13: 1431–1437
Wang Y, Doren DJ (2005) Solid State Commun 136: 186–189
Wang Y, Chen X, Hamers RJ (1994) Phys Rev B: Condens Matter 50: 4534–4547
Wardle MG, Goss JP, Briddon PR (2005) Phys Rev B: Condens Matter 71: 155205
Wardle MG, Goss JP, Briddon PR (2006) Phys Rev Lett 96: 205504
Warren AC, Woodall JM, Freeouf JL et al. (1990) Appl Phys Lett 57: 1331–3
Watkins GD (1975) Phys Rev B: Condens Matter 12: 5824–39
Watkins GD, Corbett JW (1961) Phys Rev 121: 1001–1014
Watkins GD, Kleverman M, Thilderkvist A et al. (1991) Phys Rev Lett 67: 1149–1152
Weber ER (1983) Appl Phys A 30: 1–22
Weir BE, Eaglesham DJ, Feldman LC et al. (1995) Appl Surf Sci 84: 413–418
Williams EW (1968) Phys Rev 168: 922–928
Wilson RG, Vartuli CB, Abernathy CR et al. (1995) Solid-State Electron 38: 1329–1333
Windl W, Bunea MM, Stumpf R et al. (1999) Phys Rev Lett 83: 4345–4348
Wolfe CM, Stillman GE (1975) Appl Phys Lett 27: 564–7
Woodbury HH, Tyler WW (1957) Phys Rev 105: 84–92
Wu C, Crouch CH, Zhao L et al. (2001) Appl Phys Lett 78: 1850–1852
Wu P, Zhong J, Emanetoglu NW et al. (2004) J Electron Mater 33: 596–599
Xiong Zh, Jiang Fy, Wan Qx et al. (2006) Trans Nonferr Metal Soc 16: s854–s857
Yahia J (1963) Phys Rev 130: 1711–1719
Yang D, Fan R, Li L et al. (1996) Appl Phys Lett 68: 487–489
Yang K, Dai Y, Huang B (2007) J Phys Chem C 111: 12086–12090
Yates JT, Jr., Suzuki T, Maksymovych P et al. (2006) Surf Sci 600: 366–9
Yokota K, Kuchii H, Nakamura K et al. (2000) J Appl Phys 88: 5017–5021
Yu JC, Jiaguo Y, Wingkei H et al. (2002) Chem Mater 14: 3808–16
Yu M, Huang R, Zhang X et al. (2004) Mater Sci Semicond Process 7: 13–17
Yu S, Gosele U, Tan TY (1989) J Appl Phys 66: 2952–2961
Yu ZG, Gong H, Wu P (2005) Appl Phys Lett 86: 212105
Zhang SB, Northrup JE (1991) Phys Rev Lett 67: 2339–42
Zhao D, Peng T, Xiao J et al. (2007) Mater Lett 61: 105–110
Zheng JF, Liu X, Newman N et al. (1994) Phys Rev Lett 72: 1490
Zhu J (1998) Comp Mater Sci 12: 309–18
Zhu J, de la Rubiz TD, Yang LH et al. (1996) Phys Rev B: Condens Matter 54: 4741–4747
Zistl C, Sielemann R, Haesslein H et al. (1997) Mater Sci Forum 258–263: 53–58
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(2009). Extrinsic Defects. In: Charged Semiconductor Defects. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/978-1-84882-059-3_8
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