Abstract
Kinetics studies were conducted on both Ag-refractory metal alloys and bilayers on silicon dioxide substrates during self-encapsulation in an NH3 ambient. Adams et al. [1] and Zou et al. [2] studied the dealloying kinetics of Ag (Ti), Cu (Ti) and Cu (Cr) alloys during nitridation in NH3 and reported that the kinetics of the encapsulating layer (TiN or CrN) formation revealed a self-limiting behavior. The rapid dealloying of Ti in Ag (Ti) alloys followed by a much slower diffusion rate is a result of microstructural changes occurring simultaneously with the out-diffusion. The studies of the kinetics of the alloys further showed that incomplete dealloying occurs resulting in a high residual refractory metal concentration. The residual refractory metal in Ag results in higher than elemental resistivities of these metals [1]. Alford et al. [3] studied the encapsulation of Ag by a TiN layer by annealing Ag/Ti bilayer structures in an NH3 ambient. Compared to the alloys nitridation of the bilayers resulted in minimal Ti accumulation in Ag films.
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(2008). Integration Issues. In: Silver Metallization. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/978-1-84800-027-8_6
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