Abstract
The bistable states are the foundation of all memory devices to store data. For conventional memory devices, the bistable states are represented by voltage levels and the transition is described by the charging and discharging of the capacitors. The transition dynamics is critical in order to obtain important figures of merit such as device operation speed and energy. Therefore, it is of great importance to quantitatively understand the physical mechanism and transition dynamics of the emerging nonvolatile devices, whose states are represented by nonelectrical variables. For the magnetoresistive random-access memory family, including toggled MRAM, STT-MRAM, and racetrack memory, the magnetization dynamics is the fundamental physics behind, while for the resistive random-access memory category, including memristor and CBRAM, the ion migration effect is the shared physics. In this chapter, both the magnetization dynamics and ion migration dynamics are introduced.
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Yu, H., Wang, Y. (2014). Fundamentals of NVM Physics and Computing. In: Design Exploration of Emerging Nano-scale Non-volatile Memory. Springer, New York, NY. https://doi.org/10.1007/978-1-4939-0551-5_2
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DOI: https://doi.org/10.1007/978-1-4939-0551-5_2
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