Summary
Microelectronic data processing systems are analyzed and various requirements for components are considered. The rapid reduction in transmission line cross section upon scaling down causes increased losses in microelectronic systems, thus giving rise to the need for high-impedance components for noncryogenic applications. A new component is proposed that seems particularly suited for microelectronic system requirements and fabrication methods. This component is based upon the quantum-mechanical tunneling of electrons into vacuum, has an estimated switching time of 10-10 sec, promises immunity to temperature variations, and seems adaptable to self-forming manufacturing methods giving component uniformity. A method of electron-beam-activated micromachining for film materials is presented in which a thin chemically resistant film is formed with an electron beam to selectively protect the film being machined during a subsequent molecular beam etching. This high-speed process has resolution capabilities of several hundred angstrom units, can process electronically clean materials with minimum contamination, and may ultimately be suited for the economical production of 1-in.3 data processing systems having 1011 active components.
Presented in absentia and here printed by permission of the author and the National Joint Computer Committee.
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References
L. Holland, “Vacuum Deposition of Thin Films,” John Wiley 8s Sons, Inc., New York, 1956, p. 233. See sections on “Conduction in Very Thin Films” and “Mean Free Path of Conduction Electrons.”
D. A. Powers and A. Von Hippel, Massachusetts Institute of Technology Laboratory for Insulation Research. Progress Reports show consistent breakdown strengths between 50 and 200 Mv/cm for film thicknesses between 700 and 4000 A using alumino silicate glass.
W. P. Dyke and W. W. Dolan, “Advances in Electronics and Electron Physics,” Academic Press, Inc., New York, 1956, Vol. VIII, p. 153. See the discussion on field emission cathode blunting.
E. Mueller, “Handbuch der Physik,” Springer—Verlag, Berlin, 1956, Vol. 21, p. 202.
V. E. Cosslett, A. Engstrom, and H. H. Pattee, “X-Ray Microscopy and Microradiography,” Academic Press, Inc., New York, 1957, p. 336.
W. P. Dyke and W. W. Dolan, “Advances in Electronics and Electron Physics,” Academic Press, Inc., New York, 1956, Vol. VIII, p. 109.
J. P. Barbour, F. M. Charbonnier, L. F. Garrett, and W. P. Dyke, “On the Application of Field Emission to a Two Cavity Microwave Amplifier,” paper given at the 1958 Field Emission Symposium, University of Chicago.
Russell D. Young and Erwin W. Mueller, “Experimental Determination of the Total Energy Distribution of Field Emitted Electrons,” paper given at 1958 Field Emission Symposium, University of Chicago.
W. P. Dyke and W. W. Dolan, “Advances in Electronics and Electron Physics,” Academic Press, Inc., New York, 1956, Vol. VIII, pp. 102, 121; Appendix II.
E. E. Martin, J. K. Trolan, and B. W. Steiler, “Research on Field Emission Cathodes,” Scienctific Rept. 5, Contract AF 33(616)-5404, Linfield Research Institute, McMinville, Oregon (1959).
H. Bruining, “Physics and Application of Secondary Electron Emission,” McGraw-Hill Book Company, Inc., New York, 1954.
A. N. Skellett, “The Use of Secondary Electron Emission to Obtain Trigger or Relay Action,” J. Appl. Phys., Vol. 13, p. 519 (Aug. 1942).
J. S. Cook, R. Kompfner, and W. H. Yocom, “Slalom Focusing,” Proc. Inst. Radio Engineers, Vol. 45, p. 1517 (1957).
C. Burton Crumly and Robert Adler, “Electron Beam Parametric Amplifiers,” Electronic Industries, p. 73 (Nov. 1959).
C. F. Powell, I. E. Campbell, and B. W. Gonser, “Vapor-Plating,” John Wiley 8s Sons, Inc., New York, 1955.
D. A. Buck and K. R. Shoulders, “An Approach to Microminature Printed Systems,” Proceedings of the Eastern Joint Computer Conference (Dec. 1958), Special Pub. T-114.
V. E. Cosslett, A Engstrom, and H. H. Pattee, “X-Ray Microscopy and Microradiography,” Academic Press, Inc., New York, 1957.
V. E. Cosslett and P. Duncumb, “A Scanning Microscope with Either Electron or X-Ray Recording,” Academic Press, Inc., New York, p. 12; see also “Electron Microscopy—Proceedings of the Stockholm Conference” (Sept 1956).
H. E. Famsworth, R E. Schilier, T. H. George, and R. M. Burger, “Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low-Energy Electron Diffraction,” J. Appl. Phys., Vol. 29, p. 1150 (1958).
Ludwig Mayer, J. Appl. Phys., Vol. 26, p. 1228 (1955);
Ludwig Mayer, J. Appl. Phys., Vol. 28, p. 975 (1957);
Ludwig Mayer, J. Appl. Phys., Vol. 29, p. 658 (1958);
Ludwig Mayer, J. Appl. Phys., Vol. 29, p. 1454 (1958).
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Shoulders, K.R. (1962). On Microelectronic Components, Interconnections, and System Fabrication. In: Muses, C.A., McCulloch, W.S. (eds) Aspects of the Theory of Artificial Intelligence. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6584-4_10
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DOI: https://doi.org/10.1007/978-1-4899-6584-4_10
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