Abstract
The properties of vacuum-deposited thin boron films are described. The layers, formed on fused silica substrates by electron bombardment, remain amorphous in structure up to approximately 900°C. Reaction with electrodes may occur, however, before this temperature is attained. Optical measurements indicate a minimum band gap of about 1. 32 eV and a possible direct transition at 2. 08 eV. Electrical behavior of the layers is a function of field, temperature, and thickness. Nonlinear conductivity is observed under high field (> 104 V/cm) conditions. This nonlinear behavior is believed to be due to impact ionization of acceptor states situated about 0. 1 eV above the valence band. An empirical expression describing the electrical properties is formulated.
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Feldman, C., Ordway, F., Zimmerman, W., Moorjani, K. (1965). Vacuum-Deposited Amorphous Boron Films. In: Gaulé, G.K. (eds) Boron. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6574-5_20
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DOI: https://doi.org/10.1007/978-1-4899-6574-5_20
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