Abstract
Electrical and optical experiments were performed on relatively large, but impure, single crystals of the beta-rhombohedral form of boron. All samples had a high resistivity (about 7 ·; 105 Ω cm at 300°K) which decreased by a factor of 106 between room temperature and 750°K. The thermal energy gap between the valence band and the conduction band was found to be between 1.27 and 1.35 eV for three crystal directions. The optical band gap varied between 1.41 and 1.44 eV for single crystals and was 1.6 eV for a sample containing several crystallites. The maximum error in the thermal and optical values was ±0.02 and ±0.08 eV, respectively.
This paper originally appeared in the Journal of Physics and Chemistry of Solids 25:701–706 (1964). This work was done at Saint Louis University under V. Jacobsmeyer, S. J. , from 1959 to 1962.
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References
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Brungs, R.A. (1965). Thermal and Optical Band Gaps of Monocrystalline Beta-Rhombohedral Boron. In: Gaulé, G.K. (eds) Boron. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6574-5_12
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DOI: https://doi.org/10.1007/978-1-4899-6574-5_12
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