Abstract
Elemental boron has been prepared by the hydrogen reduction of boron bromide on hot wires and by other methods. Crystals up to 0.1 mm in length were grown on a tantalum wire at 1500°C. Boron diffusion into the wire at this temperature was serious. B4C crystals up to 1 mm in diameter were grown on a graphite disk heated to 2000°C. Infrared transmission, resistivity, and hardness tests were made on the samples.
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Ellis, R.C. (1960). Various Preparations of Elemental Boron. In: Kohn, J.A., Nye, W.F., Gaulé, G.K. (eds) Boron Synthesis, Structure, and Properties. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6572-1_6
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DOI: https://doi.org/10.1007/978-1-4899-6572-1_6
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